SSF6808_15 GOOD-ARK | Alldatasheet
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Technical content
www.goodark.com Page 1 of 5 Rev.2.4 SSF 6808 68V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I B D B B c B C Continuous drain current,VGS@10V 84 I B D B B c B C Continuous drain current,VGS@10V 76 I B DM B Pulsed drain current ① 310 A Power dissipation 181 W P B D B B C B C C V B GS B Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns E B AS B Single pulse avalanche energy ② 400 mJ E B AR B Repetitive avalanche energy TBD T B J B T B STG B Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R B θJC B Junction-to-case — 0.83 — R B θJA B Junction-to-ambient — — 62 C/W Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV B DSS B Drain-to-Source breakdown voltage 68 — — V V B GS B =0V,I B D B =250μA R B DS(on) B Static Drain-to-Source on-resistance — 5 8 mΩ V B GS B =10V,I B D B =30A V B GS(th) B Gate threshold voltage 2.0 — 4.0 V V B DS B B GS B B D B =250μA — 2 V B DS B =68V,V B GS B =0V I B DSS B Drain-to-Source leakage current — 10 μA V B DS B =68V, V B GS B =0V,T B J B C Gate-to-Source forward leakage — — 100 V B GS B =20V I B GSS B Gate-to-Source reverse leakage — — -100 nA V B GS B =-20V SSF6808 Top View (TO-220) ID =84A BV=68V R DS (ON) =8mohm
FEATURES
Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
DESCRIPTION
The SSF6808 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808 is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 5 Rev.2.4 SSF 6808 68V N-Channel MOSFET Q B g B Total gate charge — 90 — Q B gs B Gate-to-Source charge — 18 — Q B gd B Gate-to-Drain("Miller") charge — 28 — nC I B D B =30A V B DD B =30V V B GS B =10V t B d(on) B Turn-on delay time — 18.2 t B r B Rise time — 15.6 t B d(off) B Turn-Off delay time — 70.5 t B f B Fall time — 13.8 nS V B DD B =30V I B D B =2A ,R B L B =15Ω R B G B =2.5Ω V B GS B =10V C B iss B Input capacitance — 3150 C B oss B Output capacitance — 300 — C B rss B Reverse transfer capacitance — 240 — pF V B GS B =0V V B DS B =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I B S B Continuous Source Current (Body Diode) — — 84 I B SM B Pulsed Source Current (Body Diode) ① — — 310 A MOSFET symbol showing the integral reverse p-n junction diode. V B SD B Diode Forward Voltage — — 1.3 V T B J B C,I B S B =68A,V B GS B =0V ③ t B rr B Reverse Recovery Time — 57 — nS Q B rr B Reverse Recovery Charge — 107 — nC T B J B C,I B F B =68A di/dt=100A/μs ③ t B on B Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit EAS test circuit Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 37A, VDD = 30V. Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting T J = 25°C.
www.goodark.com Page 3 of 5 Rev.2.4 SSF 6808 68V N-Channel MOSFET Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature Switch Waveforms Switch Time Test Circuit
www.goodark.com Page 4 of 5 Rev.2.4 SSF 6808 68V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve
www.goodark.com Page 5 of 5 Rev.2.4 SSF 6808 68V N-Channel MOSFET Mechanical Data Min Nom Max Min Nom Max ФP1 1.500 0.059 e ϴ1 - 7 - - 7 ϴ2 - 7 - - 7 ϴ3 - 3 - 5 ϴ4 - 3 - 1 Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC TO-220 PACKAGE OUTLINE DIMENSION_GN E D ФP A ce b ϴ2 ϴ L ФP1 E