SSF6807 SILIKRON | Alldatasheet
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Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 84 A ID@Tc=100ْC Continuous drain current,VGS@10V 76 IDM Pulsed drain current ① 310 PD@TC=25ْC Power dissipation 150 W Linear derating factor 1.5 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 400 mJ EAR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage 31 v/ns TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 60 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 0.0057 0.008 Ω VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 — 4.0 V VDS=VGS,ID=250μA IDSS Drain-to-Source leakage current — — 2 μA VDS=60V,VGS=0V — — 10 VDS=60V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V SSF6807 TOP View (T0-220) ID =84A BV=60V Rdson=0.008Ω Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6807 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6807 is assembled in high reliability and qualified assembly house. Application: Power switching application
Qg Total gate charge — 90 nC ID=30A,VGS= 1 0 V VDD=30V Qgs Gate-to-Source charge — 18 — Qgd Gate-to-Drain("Miller") charge — 28 — td(on) Turn-on delay time — 18.2 nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS= 1 0 V tr Rise time — 15.6 td(off) Turn-Off delay time — 70.5 tf Fall time — 13.8 Ciss Input capacitance — 3150 pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Coss Output capacitance — 300 Crss Reverse transfer capacitance — 240 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 84 A MOSFET symbol showing the integral reverse p-n junction diode. ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 310 VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=60A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS TJ=25ْC,IF=75A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 107 — μC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) E A S T e s t C i r c u i t : G a t e C h a r g e T e s t C i r c u i t : Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
S w i t c h T i m e T e s t C i r c u i t : S w i t c h W a v e f o r m : Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature
Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Transient Thermal Impedance Curve
TO-220 MECHANICAL DATA: