SSF6670 GOOD-ARK | Alldatasheet
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www.goodark.com Page 1 of 6 Rev.2.1 SSF 6670 60V Dual N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF6670 SSF6670 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±25 V I D (25 3.5 A I D (70 2.8 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 20 A Maximum Power Dissipation P D 2.4 W Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 V GENERAL FEATURES
- V DS = 60V,I D =3.5A R DS(ON) <120mΩ @ V GS =4.5V R DS(ON) <90mΩ @ V GS =10V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF6670 uses advanced trench technology to provide excellent R DS (ON) and low gate charge. A PPLICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment S OP T op V iew
www.goodark.com Page 2 of 6 Rev.2.1 SSF 6670 60V Dual N-Channel MOSFET Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V 10 μA Gate-Body Leakage Current I GSS V GS =±25V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1 3 V V GS =4.5V, I D =2A 80 120 mΩ Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =3A 65 90 mΩ Forward Transconductance g FS V DS =10V,I D =3A 3 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 500 PF Output Capacitance C oss 50 PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz 40 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 6 nS Turn-on Rise Time t r 5 nS Turn-Off Delay Time t d(off) 16 nS Turn-Off Fall Time t f V DS =30V,V GS =10V,R GEN =3Ω I D =1A 3 nS Total Gate Charge Q g 7 nC Gate-Source Charge Q gs 2 nC Gate-Drain Charge Q gd V DS =48V,I D =3A,V GS =4.5V 3 nC Body Diode Reverse Recovery Time T rr 27 nS Body Diode Reverse Recovery Charge Q rr I F =4A, dI/dt=100A/µs 32 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.7A 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 6 of 6 Rev.2.1 SSF 6670 60V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.