SSF6092G1 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 6 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 2.7 I DM Pulsed Drain Current 10.8 A Power Dissipation 1.25 W P D @TC = 25°C Linear Derating Factor 0.01 W/°C V DS Drain-Source Voltage 60 V V GS Gate-to-Source Voltage ± 20 V T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C V DSS 60V R DS (on) 70mΩ(typ) I D 2.7A SOT -23 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 6 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units Junction-to-Ambient (t ≤ 10s) — 99 R θJA Junction-to-Ambient (PCB mounted, steady-state) 100 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 60 — — V V GS = 0V, I D = 250μA R DS(on) Static Drain-to-Source on-resistance — 70 92 mΩ V GS =10V,I D = 2.7A V GS(th) Gate threshold voltage 1 — 2.5 V V DS = V GS , I D = 250μA I DSS Drain-to-Source leakage current — — 1 μA V DS =60V, V GS =0V Gate-to-Source forward leakage — 100 V GS =20V I GSS Gate-to-Source reverse leakage -100 — nA V GS = -20V Q g Total gate charge — 12 — Q gs Gate-to-Source charge — 3.5 — Q gd Gate-to-Drain("Miller") charge — 3.7 — nC I D = 4A V DD =40V V GS = 10V t d(on) Turn-on delay time — 9.2 — t r Rise time — 16.7 — t d(off) Turn-Off delay time — 35.4 — t f Fall time — 8.6 — nS V GS =10V, V DS =25V, R GEN =50Ω I D =1.2A C iss Input capacitance — 641 — C oss Output capacitance — 48 — C rss Reverse transfer capacitance — 38 — pF V GS = 0V V DS = 25V ƒ =1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 2.7 A I SM Pulsed Source Current (Body Diode) — — 10.8 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.85 1.3 V I S =2.7A, V GS =0V,T J = 25°C

www.goodark.com Page 3 of 6 Rev.1.0 Test Circuits and Waveforms: Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C.

www.goodark.com Page 4 of 6 Rev.1.0 Thermal Characteristics： Fig 1. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

www.goodark.com Page 5 of 6 Rev.1.0 Mechanical Data Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0 Symbol Dimension In Millimeters Dimension In Inches 0.95TYP 0.037TYP 0.55REF 0.022REF SOT-23 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 6 of 6 Rev.1.0 Ordering and Marking Information Device Marking: 6092 Package (Available) SOT23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOT23 3000 10 30000 4 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices