SSF6072G5 SILIKRON | Alldatasheet
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www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, VGS @ 10V① 4 A ID @ TC = 100° C Continuous Drain Current, VGS @ 10V① 3 IDM Pulsed Drain Current② 16 PD @TC = 25° C Power Dissipation③ 3.3 W VDS Drain-Source Voltage 60 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 15 mJ IAS Avalanche Current @ L=0.3mH 10 A TJ TSTG Operating Junction and Storage Temperature Range -55 to +175 °C Thermal Resistance Symbol Characterizes Typ. Max. Units RθJA Junction-to-ambient (t ≤ 10s) ④ — 38 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 35 ℃/W VDSS 60V RDS(on) 67mΩ (typ.) ID 4A SOT-223 Marking and pin Assignment Schematic diagram Advanced MOSFET process technology Special designed for DC-DC and DC-AC converters, load switching and general purpose
applications
Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in DC-DC and DC-AC converters and a wide variety of other applications. 6072 SSF6072G5 6072SSF6072G5
www.silikron.com Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 60 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 67 100 mΩ VGS=10V,ID = 1.5A — 76 115 VGS=5V,ID = 1.5A VGS(th) Gate threshold voltage 1 — 2.5 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 60V,VGS = 0V — — 10 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V gfs Forward Transconductance 1 — — S VDS = 15 V ID = 1.5A Qg Total gate charge — 12 — nC ID = 4A, VDS=40V, VGS =10V Qgs Gate-to-Source charge — 3.5 — Qgd Gate-to-Drain("Miller") charge — 3.7 — td(on) Turn-on delay time — 9.2 — ns VGS=10V, VDS=25V, RGEN=50Ω，ID = 1.2A, tr Rise time — 16.7 — td(off) Turn-Off delay time — 35.4 — tf Fall time — 8.6 — Ciss Input capacitance — 582 — pF VGS = 0V VDS = 30V ƒ = 1MHz Coss Output capacitance — 49 — Crss Reverse transfer capacitance — 36 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 4 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 16 A VSD Diode Forward Voltage — — 1.5 V IS=4A, VGS=0V
www.silikron.com Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C
www.silikron.com Mechanical Data： SOT-223 Dimensions in Millimeters (UNIT: mm) Notes： ① Dimensions are inclusive of plating ② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. ③ Dimension L is measured in gauge plane. ④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.silikron.com Ordering and Marking Information Device Marking: SSF6072G5 Package (Available) SOT-223 Operating Temperature Range C : -55 to 175ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT-223 2500pcs 2pcs 5000pcs 8pcs 40000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ or 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices
www.silikron.com ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P .R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com