SSF6072G5 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.1 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 4 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 3 I DM Pulsed Drain Current② 16 A P D @TC = 25°C Power Dissipation③ 3.3 W V DS Drain-Source Voltage 60 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy @ L=0.3mH 15 mJ I AS Avalanche Current @ L=0.3mH 10 A T J T STG Operating Junction and Storage Temperature Range -55 to +175 °C Thermal Resistance Symbol Characteristics Typ. Max. Units Junction-to-ambient (t ≤ 10s) ④ — 38 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W V DSS 60V R DS (on) 67mΩ (typ.) I D SOT -223 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for DC-DC and DC-AC converters, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in DC-DC and DC-AC converters and a wide variety of other applications. 6072 SSF6072G5 6072 SSF6072G5

www.goodark.com Page 2 of 7 Rev.1.1

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 60 — — V V GS = 0V, ID = 250μA — 67 100 V GS =10V,I D = 1.5A R DS(on) Static Drain-to-Source on-resistance — 76 115 mΩ V GS =5V,I D = 1.5A V GS(th) Gate threshold voltage 1 — 2.5 V V DS = V GS , I D = 250μA — — 1 V DS = 60V,V GS = 0V I DSS Drain-to-Source leakage current — — 10 μA T J = 125°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V gfs Forward Transconductance 1 — S V DS = 15 V I D = 1.5A Q g Total gate charge — 12 — Q gs Gate-to-Source charge — 3.5 — Q gd Gate-to-Drain("Miller") charge — 3.7 — nC I D = 4A, V DS =40V, V GS =10V t d(on) Turn-on delay time — 9.2 — t r Rise time — 16.7 — t d(off) Turn-Off delay time — 35.4 — t f Fall time — 8.6 — ns V GS =10V, VDS=25V, R GEN =50Ω，I D = 1.2A, C iss Input capacitance — 582 — C oss Output capacitance — 49 — C rss Reverse transfer capacitance — 36 — pF V GS = 0V V DS = 30V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 4 A I SM Pulsed Source Current (Body Diode) — — 16 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.5 V I S =4A, V GS =0V

www.goodark.com Page 3 of 7 Rev.1.1 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 7 Rev.1.1 Mechanical Data SOT-223 Dimensions in Millimeters (UNIT: mm) Notes： ① Dimensions are inclusive of plating ② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. ③ Dimension L is measured in gauge plane. ④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

www.goodark.com Page 7 of 7 Rev.1.1 Ordering and Marking Information Device Marking: SSF6072G5 Package (Available) SOT-223 Operating Temperature Range C : -55 to 175ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT-223 2500pcs 2pcs 5000pcs 8pcs 40000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices