SSF6014D GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.2.2 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 60 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 42 I DM Pulsed Drain Current ② 240 A Power Dissipation③ 115 W P D @TC = 25°C Linear Derating Factor 0.74 W/°C V DS Drain-Source Voltage 60 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy @ L=0.3mH 235 mJ I AS Avalanche Current @ L=0.3mH 39 A T J T STG Operating Junction and Storage Temperature Range -55 to + 175 °C V DSS 60V R DS (on) 12mΩ(typ.) I D 60A DP AK Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.2.2 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case ③ 1.31 — ℃/W R θJA Junction-to-ambient ④ — 62 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 60 — — V V GS = 0V, ID = 250μA R DS(on) Static Drain-to-Source on-resistance — 12 14 mΩ V GS =10V,I D = 30A 2.0 — 4.0 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.0 — V T J = 125℃ — — 2 V DS = 60V,V GS = 0V I DSS Drain-to-Source leakage current — — 10 μA T J = 150°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — 45 — Q gs Gate-to-Source charge — 4 — Q gd Gate-to-Drain("Miller") charge — 15 — nC I D = 30A, V DS =30V, V GS = 10V t d(on) Turn-on delay time — 14.6 — t r Rise time — 14.2 — t d(off) Turn-Off delay time — 40 — t f Fall time — 7.3 — ns V GS =10V, VDS=30V, R L =15Ω, R GEN =2.5Ω C iss Input capacitance — 1480 — C oss Output capacitance — 190 — C rss Reverse transfer capacitance — 135 — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 60 A I SM Pulsed Source Current (Body Diode) — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V I S =30A, V GS =0V t rr Reverse Recovery Time — 33 — ns Q rr Reverse Recovery Charge — 61 — nC T J = 25°C, I F =60A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.2.2 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. Repetitive rating; pulse width limited by max② . junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C. ⑥ The maximum current rating is limited by bond-wires.

www.goodark.com Page 6 of 7 Rev.2.2 Mechanical Data Min Nom Max Min Nom Max K 5.350 (REF) 2.900 (REF) 1.600 (REF) (REF) 8 (REF) 0.063 (REF) 0.211 (REF) 0.114 (REF) Symbol Dimension In Millimeters Dimension In Inches 4.83 (REF) 0.190 (REF) DPAK PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.2.2 Ordering and Marking Information Device Marking: SSF6014D Package (Available) DPAK Operating Temperature Range C : -55 to 175 ºC Devices per Unit Option1： Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 80 50 4000 10 40000 Option2： Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 2500 2 5000 7 35000 Option3： Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 2500 1 2500 10 25000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 175℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices