SSF6014A SILIKRON | Alldatasheet
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©Silikron Semiconductor Corporation 2011.3.11 Version: 1.1 page 1 of 5 SSF6014A Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 60 A ID@Tc=ْC Continuous drain current,VGS@10V 42 IDM Pulsed drain current ① 240 PD@TC=ْC Power dissipation 115 W Linear derating factor 0.74 WْC VGS Gate-to-Source voltage ± 20 V EAS Single pulse avalanche energy ② 235 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 1.31 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 60 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 12 14 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance — 60 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current — — 2 μA VDS=60V,VGS=0V — — 10 VDS=60V, VGS=0V,TJ=1ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V SSF6014A TOP View (D2PAK) ID =60A BV=60V Rdson=14mΩ（max.） Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6014A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014A is assembled in high reliability and qualified assembly house. Application: Power switching application
©Silikron Semiconductor Corporation 2011.3.11 Version: 1.1 page 2 of 5 SSF6014A Qg Total gate charge — 45 — nC ID=30A VDD=30V VGS=10V Qgs Gate-to-Source charge — 4 — Qgd Gate-to-Drain("Miller") charge — 15 — td(on) Turn-on delay time — 14.6 — nS VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 14.2 — td(off) Turn-Off delay time — 40 — tf Fall time — 7.3 — Ciss Input capacitance — 1480 — pF VGS=0V VDS=25V f=1.0MHZ Coss Output capacitance — 190 — Crss Reverse transfer capacitance — 135 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 60 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 240 VSD Diode Forward Voltage — — 1.3 V TJ=ْC,IS=40A,VGS=0V ③ trr Reverse Recovery Time — 33 — nS TJ=ْC,IF=60A di/dt=100A/μs ③ Qrr Reverse Recovery Charge — 61 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit: Vdd RL RG1mA Vgs EAS test circuit: VDD BVdss L RG Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25° C
©Silikron Semiconductor Corporation 2011.3.11 Version: 1.1 page 3 of 5 SSF6014A Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature Switch Waveforms: Switch Time Test Circuit：
©Silikron Semiconductor Corporation 2011.3.11 Version: 1.1 page 4 of 5 SSF6014A Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation 2011.3.11 Version: 1.1 page 5 of 5 SSF6014A D2-PAK MECHANICAL DATA: