SSF6014 GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 5 Rev.2.3 SSF 60V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 60 I D c C Continuous drain current,VGS@10V 42 I DM Pulsed drain current ① 240 A Power dissipation 115 W P D C C C V GS Gate-to-Source voltage ±20 V E AS Single pulse avalanche energy ② 235 mJ E AR Repetitive avalanche energy TBD T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 1.31 — R θJA Junction-to-ambient — — 62 C/W Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 60 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 12 14 mΩ V GS =10V,I D =30A V GS(th) Gate threshold voltage 2.0 4.0 V V DS GS D =250μA g fs Forward transconductance — 60 — S V DS =5V,I D =30A — — 2 V DS =60V,V GS =0V I DSS Drain-to-Source leakage current — — 10 μA V DS =60V, V GS =0V,T J C I GSS Gate-to-Source forward leakage — — 100 nA V GS =20V SSF6014 Top View (TO-220) ID =60A BV=60V R DS (ON) =14mΩ（max.）
FEATURES
Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
DESCRIPTION
The SSF6014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014 is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 5 Rev.2.3 SSF 60V N-Channel MOSFET Gate-to-Source reverse leakage — — -100 V GS =-20V Q g Total gate charge — 45 — Q gs Gate-to-Source charge — 4 — Q gd Gate-to-Drain("Miller") charge — 15 — nC I D =30A V DD =30V V GS =10V t d(on) Turn-on delay time — 14.6 t r Rise time — 14.2 t d(off) Turn-Off delay time — 40 — t f Fall time — 7.3 nS V DD =30V I D =2A ,R L =15Ω R G =2.5Ω V GS =10V C iss Input capacitance — 1480 C oss Output capacitance — 190 C rss Reverse transfer capacitance — 135 pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) — — 60 I SM Pulsed Source Current (Body Diode) ① — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =40A,V GS =0V ③ t rr Reverse Recovery Time — 33 — nS Q rr Reverse Recovery Charge — 61 — nC T J C,I F =60A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit EAS test circuit Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting T J = 25°C.
www.goodark.com Page 3 of 5 Rev.2.3 SSF 60V N-Channel MOSFET Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature Switch Waveforms Switch Time Test Circuit
www.goodark.com Page 4 of 5 Rev.2.3 SSF 60V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve
www.goodark.com Page 5 of 5 Rev.2.3 SSF 60V N-Channel MOSFET MECHANICAL DATA Min Nom Max Min Nom Max ФP1 1.500 0.059 e ϴ1 - 7 - - 7 ϴ2 - 7 - - 7 ϴ3 - 3 - 5 ϴ4 - 3 - 1 Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC TO-220 PACKAGE OUTLINE DIMENSION_GN E D ФP A ce b ϴ2 ϴ L ФP1 E