SSF6007 GOOD-ARK | Alldatasheet

Document overview

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Technical content

www.goodark.com Page 1 of 5 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ -10V① -130 I D @ TC = 100°C Continuous Drain Current, V GS @ -10V① -100 I DM Pulsed Drain Current② -520 mA P D @TC = 25°C Power Dissipation③ 230 mW V DS Drain-Source Voltage -50 V V GS Gate-to-Source Voltage ± 20 V ESD ESD Rating (HBM module) 1 KV T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units Junction-to-ambient (t ≤ 10s) ④ — 556 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 540 ℃/W V DSS -50V R DS (on) 2.1ohm(typ.) I D -130mA SOT -23 Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for Line current interrupter in telephone sets, Relay , high speed and line transformer drivers and general purpose

applications

 Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance. These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications 6007 6007

www.goodark.com Page 2 of 5 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage -50 — — V V GS = 0V, ID = -10μA R DS(on) Static Drain-to-Source on-resistance — 2.1 7 Ω V GS =-10V,I D = -130mA V GS(th) Gate threshold voltage -0.8 — -2 V V DS = V GS , I D = -1mA — — -0.1 V DS =-40V,V GS = 0V -1 V DS =-50V,V GS = 0V I DSS Drain-to-Source leakage current — — -50 μA T J = 125°C 10 V GS =20V I GSS Gate-to-Source forward leakage -10 uA V GS = -20V gfs Forward Transconductance 50 — S V DS =-25 V I D =-130m A C iss Input Capacitance 45 — C oss Output Capacitance 18 — C rss Reverse Transfer Capacitance 11 — pF V GS = 0; V DS = -5 V; f = 1 MHz t d(on) Turn–On Delay Time 3.1 t r Rise Time 1.3 t d(off) Turn–Off Delay Time t f Fall Time 7.5 ns VDD = –15V; ID = –2.5 A; RL = 50ohm Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 130 mA I SM Pulsed Source Current (Body Diode) — — 520 mA MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — -1.3 V I S =-130mA, V GS =0V Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 3 of 5 Rev.1.0 Fig 1: Transfer Characteristics Fig 2: Out Put Curve Fig 3: Body Diode Forward Curve Vgs Rgen Vin G Vdd Rl Vout S D V IN V OUT 10% 10% 50% 50% PULSE WIDTH INVERTED t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% V IN V OUT 10% 10% 50% 50% PULSE WIDTH INVERTED t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% Fig 4: Switching Test Circuit Fig 5: Switching Waveforms

www.goodark.com Page 4 of 5 Rev.1.0 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°

www.goodark.com Page 5 of 5 Rev.1.0 Ordering and Marking Information Device Marking: 6007 Package (Available) SOT-23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT23 3000pcs 10pcs 30000pcs 4pcs 120000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices