SSF5NS65G GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 5 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 3.1 I DM Pulsed Drain Current A Power Dissipation 50 W P D @TC = 25°C Linear Derating Factor 0.4 W/°C V DS Drain-Source Voltage 650 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=22.4mH 54 mJ I AR Avalanche Current @ L=22.4mH 2.2 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 650V R DS (on) 1.0Ω (typ.) I D TO-251 Marking and Pin Assignment Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF5NS65G series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS(ON) , energy saving, high reliability and uniformity, superior power density and space saving.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 2.5 ℃/W R θJA Junction-to-ambient (t ≤ 10s) — 75 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 650 — — V V GS = 0V, I D = 250μA — 1.0 1.2 V GS =10V,I D = 1A R DS(on) Static Drain-to-Source on-resistance — 2.2 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.7 — V T J = 125°C — — 1 V DS = 650V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 8.3 Q gs Gate-to-Source charge — 2.3 Q gd Gate-to-Drain("Miller") charge — 2.6 nC I D = 4A, V DS =100V, V GS = 10V t d(on) Turn-on delay time — 9.9 t r Rise time — 18.4 t d(off) Turn-Off delay time — 18.1 t f Fall time — 15.3 ns V GS =10V, V DS =380V, R GEN =18Ω,I D =4.5A C iss Input capacitance — 267 C oss Output capacitance — 220 C rss Reverse transfer capacitance — 4.76 pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 5 A I SM Pulsed Source Current (Body Diode) — — 15 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.85 1.2 V I S =2.8A, V GS =0V t rr Reverse Recovery Time — 284 — nS Q rr Reverse Recovery Charge — 1395 — nC T J = 25°C, I F = I S di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max A 2.200 - 2.400 0.087 - 0.094 A1 0.950 - 1.150 0.037 - 0.045 B 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 c 0.450 - 0.550 0.018 - 0.022 c1 0.450 - 0.550 0.018 - 0.022 D 6.450 - 6.750 0.254 - 0.266 D1 5.200 - 5.400 0.205 - 0.213 E 5.950 - 6.250 0.234 - 0.246 e 2.240 - 2.340 0.088 - 0.092 e1 4.430 - 4.730 0.174 - 0.186 L 9.000 - 9.400 0.354 - 0.370 Symbol Dimension In Millimeters Dimension In Inches TO-251 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSF5NS65G Package (Available) TO-251(IPAK) Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-251 80 60 4800 5 24000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices