SSF5508A SILIKRON | Alldatasheet

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www.silikron.com Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm（Typ） ID 110A Features and Benefits: SSF5508A TOP View (TO263)  Advanced trench MOSFET process technology  Special designed for convertors and power controls  Ultra low on-resistance  175℃ operating temperature  High Avalanche capability and 100% tested Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other

applications

Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, VGS @ 10V① 110 A ID @ TC = 100° C Continuous Drain Current, VGS @ 10V① 80 IDM Pulsed Drain Current② 440 ISM Pulsed Source Current.(Body Diode) 440 PD @TC = 25° C Power Dissipation③ 205 W Linear derating factor 2 W/ ْ VDS Drain-Source Voltage 55 V VGS Gate-to-Source Voltage ± 20 V dv/dt Peak diode recovery voltage 35 v/ns EAS Single Pulse Avalanche Energy @ L=0.3mH② 634 mJ IAR Avalanche Current @ L=0.3mH② 65 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Symbol Characterizes Value Unit RθJC Junction-to-case③ 0.73 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ 50 ℃/W

www.silikron.com Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source breakdown voltage 55 60 — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 4.5 6 mΩ VGS = 10V, ID = 20A VGS(th) Gate threshold voltage 2 3.1 4 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 55V, VGS = 0V — — 10 VDS = 55V, VGS = 0V, TJ = 150°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V Gate-to-Source reverse leakage Qg Total gate charge — 125 147 nC ID=30A VDD=30V VGS=10V Qgs Gate-to-Source charge — 24 30 Qgd Gate-to-Drain("Miller") charge — 49 61 Qg(th) Gate charge at shreshold — 16 20 Vplateau gate plateau voltage — 4.7 6 V td(on) Turn-on delay time — 20 — ns VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 19 — td(off) Turn-Off delay time — 70 — tf Fall time — 30 — Ciss Input capacitance — 5607 — pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz Coss Output capacitance — 463 — Crss Reverse transfer capacitance — 454 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Maximum Body-Diode Continuous Curren — 110 — A VSD Diode Forward Voltage — 0.77 1 V IS=40A, VGS=0V Trr Reverse Recovery Time — 36 — ns TJ = 25° C, IF =68A, , di/dt = 100A/μs Qrr Reverse Recovery Charge — 57 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.silikron.com Typical electrical and thermal characteristics Figure 13: Transient Thermal Impedance Curve Notes:①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. EAS starting,ID=65A. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C Switch Waveforms

www.silikron.com TO-263 MECHANICAL DATA: