SSF5508 SILIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 110 A ID@Tc=100ْC Continuous drain current,VGS@10V 80 IDM Pulsed drain current ① 400 PD@TC=25ْC Power dissipation 170 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 480 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.73 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 55 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance —4 . 5 8 m Ω VGS=10V,ID=68A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current —— 2 μA VDS=55V,VGS=0V —— 1 0 VDS=55V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF5508 TOP View (TO220) ID =110A BV=55V Rdson=4.5 mΩ(typ.) Feathers: Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF5508 is assembled in high reliability and qualified assembly house. Application: Power switching application
Gate-to-Source reverse leakage — — -100 VGS=-20V Qg Total gate charge —9 0 — nC ID= 3 0 A VDD=30V VGS=10V Qgs Gate-to-Source charge — 14 — Qgd Gate-to-Drain("Miller") charge — 24 — td(on) Turn-on delay time — 18.2 — nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 15.6 — td(off) Turn-Off delay time — 70.5 — tf Fall time — 13.8 — Ciss Input capacitance — 3150 — pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Coss Output capacitance — 300 — Crss Reverse transfer capacitance — 240 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 110 A MOSFET symbol showing the integral reverse p-n junction diode. ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 400 VSD Diode Forward Voltage — — 1.3 V T J=25ْC,IS=68A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS TJ=25ْC,IF=68A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 107 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit: EAS test circuit: BVdss Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 27.5V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature Switch Waveforms: Switch Time Test Circuit：
Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve
TO220 MECHANICAL DATA: