SSF5508_15 GOOD-ARK | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

www.goodark.com Page 1 of 7 Rev.4.2 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 110 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 80 I DM Pulsed Drain Current② 440 A Power Dissipation③ 205 W P D @TC = 25°C Linear Derating Factor 2.0 W/°C V DS Drain-Source Voltage 55 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy @ L=0.3mH② 375 mJ I AR Avalanche Current @ L=0.3mH② 50 A T J T STG Operating Junction and Storage Temperature Range -55 to +175 °C V DSS 55V R DS (on) 4.5mohm(typ.) I D 110A TO-220 Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.4.2 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 0.73 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 55 — — V V GS = 0V, ID = 250μA — 4.5 5.5 V GS =10V,I D = 68A R DS(on) Static Drain-to-Source on-resistance — 7 — mΩ T J = 125℃ 2.5 — 3.5 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.4 — V T J = 125℃ — — 1 V DS = 55V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — 124.7 Q gs Gate-to-Source charge — 24.46 Q gd Gate-to-Drain("Miller") charge — 48.68 nC I D = 30A, V DS =30V, V GS = 10V t d(on) Turn-on delay time — 19.62 t r Rise time — 18.82 t d(off) Turn-Off delay time — 69.76 t f Fall time — 30.12 ns V GS =10V, VDS=30V, R L =15Ω, R GEN =2.55Ω C iss Input capacitance — 5607 C oss Output capacitance — 463 C rss Reverse transfer capacitance — 454 pF V GS = 0V V DS = 25V ƒ = 600KHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 110 A I SM Pulsed Source Current (Body Diode) — — 440 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.94 1.3 V I S =68A, V GS =0V t rr Reverse Recovery Time — — ns Q rr Reverse Recovery Charge — — nC T J = 25°C, I F =68A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.4.2 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C. ⑥ The maximum current rating is limited by bond-wires.

www.goodark.com Page 6 of 7 Rev.4.2 DETAIL ‘A’ OPTION1 OPTION2 OPTION3 DETAIL ‘B’ (BACK VIEW) DETAIL ‘C’ OPTION1 OPTION2 OPTION3 OPTION1 OPTION2 COMMON DIMENSIONS MM SYMBOL MIN NOM MAX A 4.3 4.57 4.7 A1 1.2 - 1.4 A2 2.2 2.4 2.9 b 0.77 - 0.9 b2 1.23 - 1.36 c 0.4 - 0.7 D 15.25 15.6 15.8 D1 8.59 9.1 9.4 E 9.66 10 10.4 E1 - 8.7 E2 9.66 10 10.4 e 2.54BSC e1 5.08BSC H1 6.2 6.5 6.7 L 12.6 - 14.27 L1 - - 3.95 Φ P 3.5 3.6 3.9 Q 2.65 2.8 2.95 θ 1° 3° θ 1° 3° a1 - 1.8 a2 - 3.0 d1 - 2.0 d2 - 7.6 f1 - 1.4 f2 - 1.5 f3 - 1.0 g1 - 2.8

www.goodark.com Page 7 of 7 Rev.4.2 Ordering and Marking Information Device Marking: SSF5508 Package (Available) TO220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Packag e Type Units/Tu be Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices