SSF4NS60D GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 4 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 2.5 I DM Pulsed Drain Current A Power Dissipation 50 W P D @TC = 25°C Linear Derating Factor 0.4 W/°C V DS Drain-Source Voltage 600 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=22.4mH 54 mJ I AR Avalanche Current @ L=22.4mH 2.2 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 600V R DS (on) 1.1Ω (typ.) I D TO-252 Marking and Pin Assignment Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF4NS60D series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS(ON) , energy saving, high reliability and uniformity, superior power density and space saving.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 2.5 ℃/W R θJA Junction-to-ambient (t ≤ 10s) — 75 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 600 — — V V GS = 0V, I D = 250μA — 1.1 1.2 V GS =10V,I D = 2.8A R DS(on) Static Drain-to-Source on-resistance — 2.8 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.7 — V T J = 125°C — — 1 V DS = 600V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 8.3 Q gs Gate-to-Source charge — 2.3 Q gd Gate-to-Drain("Miller") charge — 2.6 nC I D = 4A, V DS =100V, V GS = 10V t d(on) Turn-on delay time — 9.8 t r Rise time — 17.6 t d(off) Turn-Off delay time — 19.0 t f Fall time — 15.3 ns V GS =10V, V DS =380V, R GEN =18Ω,I D =4A C iss Input capacitance — 268 C oss Output capacitance — 222 C rss Reverse transfer capacitance — 4.62 pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 4 A I SM Pulsed Source Current (Body Diode) — — 12 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.88 1.2 V I S =2.8A, V GS =0V t rr Reverse Recovery Time — 180 — nS Q rr Reverse Recovery Charge — 1304 — nC T J = 25°C, I F = I S di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max K 5.350 (REF) 2.900 (REF) 1.600 (REF) (REF) 8 (REF) 0.063 (REF) 0.211 (REF) 0.114 (REF) Symbol Dimension In Millimeters Dimension In Inches 4.83 (REF) 0.190 (REF) TO-252 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSF4NS60D Package (Available) TO-252(DPAK) Operating Temperature Range C : -55 to 150 ºC Devices per Unit Option1 Tapes/Inner Units/Inner Inner Units/Carton Box Box Boxes/Carton Box Box TO-252 2500 5000 35000 Option2 Tapes/Inner Units/Inner Inner Units/Carton Box Box Boxes/Carton Box Box TO-252 2500 2500 25000 Package Type Units/Tape Package Type Units/Tape Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices