SSF4N60G GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 4 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 2.5 I DM Pulsed Drain Current② 16 A Power Dissipation③ 77 W P D @TC = 25°C Linear Derating Factor 0.62 W/°C V DS Drain-Source Voltage 600 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=25.9mH 117 mJ I AS Avalanche Current @ L=25.9mH 3 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 600V R DS (on) 1.85Ω (typ.) I D TO-251 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 1.61 ℃/W R θJA Junction-to-ambient (t ≤ 10s) ④ — 110 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 600 — — V V GS = 0V, ID = 250μA — 1.85 2.4 V GS =10V,I D = 2A R DS(on) Static Drain-to-Source on-resistance — 4.36 — Ω T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.36 — V T J = 125℃ — — 1 V DS = 600V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125℃ 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 8.2 — Q gs Gate-to-Source charge — 2.6 — Q gd Gate-to-Drain("Miller") charge — 3.0 — nC I D = 4A, V DS =480V, V GS = 10V t d(on) Turn-on delay time — 10.8 — t r Rise time — 12.7 — t d(off) Turn-Off delay time — 38.8 — t f Fall time — 19.3 — ns V GS =10V, VDS=300V, R GEN =25Ω, ID=4A C iss Input capacitance — 653 — C oss Output capacitance — 56 — C rss Reverse transfer capacitance — 5 — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 4 A I SM Pulsed Source Current (Body Diode) — — 16 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.4 V I S =4A, V GS =0V t rr Reverse Recovery Time — 431.3 — nS Q rr Reverse Recovery Charge — 1955 — nC T J = 25°C, I F =4A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max A 2.200 - 2.400 0.087 - 0.094 A1 0.950 - 1.150 0.037 - 0.045 B 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 c 0.450 - 0.550 0.018 - 0.022 c1 0.450 - 0.550 0.018 - 0.022 D 6.450 - 6.750 0.254 - 0.266 D1 5.200 - 5.400 0.205 - 0.213 E 5.950 - 6.250 0.234 - 0.246 e 2.240 - 2.340 0.088 - 0.092 e1 4.430 - 4.730 0.174 - 0.186 L 9.000 - 9.400 0.354 - 0.370 Symbol Dimension In Millimeters Dimension In Inches TO-251 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSF4N60G Package (Available) TO-251（IPAK） Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-251 80 60 4800 5 24000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices