SSF4N60 SILIKRON | Alldatasheet
Document overview
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Technical content
Features
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability
Description
The SSF4N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application ■ High current, high speed switching ■ Lighting ■ Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous Drain Current,VGS@10V 4 A ID@Tc=ْC Continuous Drain Current,VGS@10V 2.2 IDM Pulsed Drain Current ① 16 PD@TC=ْC Power Dissipation 80 W Linear Derating Factor 0.67 WْC VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy ② 90 mJ IAR Avalanche Current ① 4 A EAR Repetitive Avalanche Energy ① 8.5 mJ dv/dt Peak Diode Recovery dv/dt ③ 4.5 V/ns TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — — 1.56 ْC/W RθCS Case-to-Sink, Flat, Greased Surface — 0.50 — RθJA Junction-to-Ambient — — 62.5 Vdss = 600V Id = 4A Rdson = 2.3Ω (typ.) SSF4N60 TOP View (TO220)
©Silikron Semiconductor Corporation 2009.11.10 Version: 1.0 page 2of6 SSF4N60 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 — — V VGS=0V,ID=250μA △ V(BR)DSS/△ TJ Breakdown Voltage Temp. Coefficient — 0.6 — VْC Reference to ْC,ID=250μA RDS(on) Static Drain-to-Source On-resistance — 2.3 2.5 Ω VGS=10V,ID=2.5A ④ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS,ID=250μA gfs Forward Transconductance — 4.3 — S VDS=40V,ID=2.25A IDSS Drain-to-Source Leakage current — — 1 uA VDS=600V,VGS=0V — — 10 VDS=480V,VGS=0V,TJ=ْC IGSS Gate-to-Source Forward leakage — — 0.5 uA VGS=30V Gate-to-Source Reverse leakage — — -0.5 VGS=-30V Qg Total Gate Charge — 11 15 nC ID=5A VDS=400V VGS=10V Qgs Gate-to-Source charge — 3 — Qgd Gate-to-Drain("Miller") charge — 5 — td(on) Turn-on Delay Time — 13 36 nS VDD=250V ID=5A RG=25Ω tr Rise Time — 22 54 td(off) Turn-Off Delay Time — 28 66 tf Fall Time — 20 50 Ciss Input Capacitance — 515 670 pF VGS=0V VDS=25V f=1.0MHZ Coss Output Capacitance — 55 72 Crss Reverse Transfer Capacitance — 6.5 8.5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 4 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 16 VSD Diode Forward Voltage — — 1.3 V TJ=ْC,IS=4A,VGS=0V ④ Trr Reverse Recovery Time — 300 — nS TJ=ْC,IF=4A di/dt=100A/μs ④ Qrr Reverse Recovery Charge — 1.8 uC Notes: ① Repetitive rating; pulse width limited by maximum. junction temperature ② L = 15mH, IAS =2.2A, VDD = 50V, RG = 25Ω. Starting TJ = 25° C ③ ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25 ْC ④ Pulse width≤300μS; duty cycle≤2%
©Silikron Semiconductor Corporation 2009.11.10 Version: 1.0 page 5of6 SSF4N60 Test Circuit and Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform
©Silikron Semiconductor Corporation 2009.11.10 Version: 1.0 page 6of6 SSF4N60 TO-220 MECHANICAL DATA: