SSF4703DC GOOD-ARK | Alldatasheet
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Technical content
www.goodark.com Page 1 of 5 Rev.2.0 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 4703DC SSF4703DC DFN3X2-8L － － － ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol MOSFET Schottky Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±8 V I D -3.4 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -15 A Schottky reverse voltage V R 20 V Continuous Forward Current I F 1.9 A Pulsed Forward Current I FM 7 A Maximum Power Dissipation P D 1.7 0.96 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ THERMAL CHARACTERISTICS MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) R θJA 75 /W ℃ GENERAL FEATURES MOSFET V DS = -20V,I D = -3.4A R DS(ON) < 160mΩ @ V GS =-1.8V R DS(ON) < 120mΩ @ V GS =-2.5V R DS(ON) < 90mΩ @ V GS =-4.5V SCHOTTKY V R = 20V, I F = 1A, V F <0.5V @ 0.5A
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF4703DC uses advanced trench technology to provide excellent R DS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. A PPLICATIONS
- DC-DC conversion applications
- Load switch
- Power management P in Assignment DFN3X2 Bottom Vi ew Schematic D iagram
www.goodark.com Page 2 of 5 Rev.2.0 Schottky Thermal Resistance, Junction-to-Ambient (Note 2) R θJA 80 /W ℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -20 V Zero Gate Voltage Drain Current I DSS V DS =-16V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±8V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -0.45 -0.7 -1 V V GS =-4.5V, I D =-3.4A 73 90 V GS =-2.5V, I D =-2.5A 99 120 Static Drain-Source On-Resistance R DS(ON) V GS =-1.8V, I D =-1.5A 133 160 mΩ Forward Transconductance g FS V DS =-5V,I D =-3.4A 4 7 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 540 PF Output Capacitance C oss 70 PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz 50 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 10 nS Turn-on Rise Time t r 12 nS Turn-Off Delay Time t d(off) 44 nS Turn-Off Fall Time t f V DD =-10V,I D =-3.4A V GS =-4.5V,R GEN =3Ω 22 nS Total Gate Charge Q g 6.1 nC Gate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd V DS =-10V,I D =-3.4A,V GS =-4.5V 1.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A -0.83 -1 V Diode Forward Current (Note 2) I S -2 A SCHOTTKY PARAMETERS Forward Voltage Drop V F I F =0.5A 0.39 0.5 V Maximum reverse leakage current Irm V R =16V 0.1 mA Junction Capacitance C T V R =10V 34 pF Schottky Reverse Recovery Time trr I F =1A, dI/dt=100A/μs 5.2 10 ns Schottky Reverse Recovery Charge Qrr I F =1A, dI/dt=100A/μs 0.8 nC
www.goodark.com Page 5 of 5 Rev.2.0 DFN3X2-8L PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) COMMON DIMENSIONS(MM) SYMBOL MIN. NOM. MAX. A 0.70 0.75 0.80 A1 — 0.02 0.05 b 0.25 0.30 0.35 c 0.18 0.20 0.25 D 2.90 3.00 3.10 e 0.65 BCS. Nd 1.95 BCS. E 1.90 2.00 2.10 L 0.28 0.35 0.42 h 0.15X4 5° NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. T op View Bottom View Side View