SSF4703 KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 MOSFE T P+Schottky Hybrid MOSFET SSF4703 (KSF4703) ■ Features

  • VDS (V) =-20V
  • ID =-3.4 A (VGS =-10V)
  • RDS(ON) ＜ 90mΩ (VGS =-4.5V)
  • RDS(ON) ＜ 120mΩ (VGS =-2.5V)
  • RDS(ON) ＜ 160mΩ (VGS =-1.8V)
  • VR = 20V, IF = 1A, VF<0.5V @ 0.5A
  • High Power and current handing capability ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol MOSFET Schottky Unit Drain-Source Voltage VDS -20 - Gate-Source Voltage VGS ±8 - Continuous Drain Current ID -3.4 - Pulsed Drain Current IDM -15 - Schottky Reverse Voltage VR - 20 V Continuous Forward Current IF - 1.9 Pulsed Forward Current IFM - 7 Power Dissipation PD 1.7 0.96 W Thermal Resistance.Junction- to-Ambient RthJA 75 80 ℃/W Junction Temperature TJ Junction Storage Temperature Range Tstg 150 -55 to 150 V A A 3.0±0.05 2.0±0.05 0.75±0.05 0.05 (max)

0.2 REF

0.63 (max) 0.38 (min) 1.02 (max) 0.77 (min) 0.35±0.1 0.3±0.05

0.65 BCS

DFN2X3-8L Unit:mm

www.kexin.com.cn2 MOSFE T P+Schottky Hybrid MOSFET SSF4703 (KSF4703) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -20 V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±8V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250uA -0.45 -1 V VGS=-4.5V, ID=-3.4A 90 VGS=-2.5V, ID=-2.5A 120 VGS=-1.8V, ID=-1.5A 160 Forward Transconductance gFS VDS=-5V, ID=-3.4A 4 7 S Input Capacitance Ciss 540 Output Capacitance Coss 70 Reverse Transfer Capacitance Crss 50 Total Gate Charge Qg 6.1 Gate Source Charge Qgs 0.6 Gate Drain Charge Qgd 1.6 Turn-On DelayTime td(on) 10 Turn-On Rise Time tr 12 Turn-Off DelayTime td(off) 44 Turn-Off Fall Time tf 22 Forward Voltage Drop VF IF=0.5A 0.5 V Maximum Reverse Leakage Current Irrm VR=16V 0.1 mA Junction Capacitance CT VR=10V 34 pF Body Diode Reverse Recovery Time trr 5.2 10 ns Body Diode Reverse Recovery Charge Qrr 0.8 nC Maximum Body-Diode Continuous Current IS -2 A Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V pF nC IF=-1A, dI/dt=100A/us ns mΩ VDD=-10V,ID=-3.4A VGS=-4.5V,RGEN=3Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-10V, f=1MHz VGS=-10V, VDS=-3.4V, ID=-4.5A Note :Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. ■ Marking Marking 4703

www.kexin.com.cn 3 MOSF ET P+Schottky Hybrid MOSFET SSF4703 (KSF4703) ■ Typical Characterisitics