SSF4607D GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 8 Rev.1.0 Main Product Characteristics V DSS -30V R DS (on) 19mΩ(typ.) I D -25A Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V(Silicon Limited) -25 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V -20 I DM Pulsed Drain Current -60 A P D @TC = 25°C Power Dissipation 41 W V DS Drain-Source Voltage -30 V V GS Gate-to-Source Voltage ± 20 V T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 3 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 25 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. TO-252 D G S

www.goodark.com Page 2 of 8 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage -30 — — V V GS = 0V, I D = -250μA — 19 35 V GS =-10V,I D = -6A R DS(on) Static Drain-to-Source on-resistance — 29 58 mΩ V GS =-4.5V,I D =-5A -1.2 — -2.4 V DS = V GS , I D = -250μA V GS(th) Gate threshold voltage — -1.4 — V T J = 125℃ I DSS Drain-to-Source leakage current — — -1 μA V DS = -24V,V GS = 0V 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — Q gs Gate-to-Source charge — 3.6 Q gd Gate-to-Drain("Miller") charge — 9.1 nC I D = -20A, V DS =-25V, V GS = -10V t d(on) Turn-on delay time — 10.7 t r Rise time — t d(off) Turn-Off delay time — 25.8 t f Fall time — 6.4 nS V GS =-10V, V DS =-15V, R L =0.75Ω,I D =-20A C iss Input capacitance — 1188 C oss Output capacitance — 173 C rss Reverse transfer capacitance — 139 pF V GS = 0V, V DS =-15V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — -25 A I SM Pulsed Source Current (Body Diode) — — -100 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — -0.77 -1 V I S =-1A, V GS =0V t rr Reverse Recovery Time — 23 — nS Q rr Reverse Recovery Charge — 14 — nC T J = 25°C, I F =-20A, di/dt = 100A/μs

www.goodark.com Page 3 of 8 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C. Gate charge test circuit: Switching time test circuit: EAS test circuit:

www.goodark.com Page 6 of 8 Rev.1.0 Typical Electrical and Thermal Characteristics Figure8.Normalized Maximum Transient Thermal Impedance

www.goodark.com Page 7 of 8 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max K 5.350 (REF) 2.900 (REF) 1.600 (REF) (REF) 8 (REF) 0.063 (REF) 0.211 (REF) 0.114 (REF) Symbol Dimension In Millimeters Dimension In Inches 4.83 (REF) 0.190 (REF) TO-252 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 8 of 8 Rev.1.0 Ordering and Marking Information Device Marking: SSF4607D Package (Available) TO-252(DPAK) Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 2500 1 2500 5 12500 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ to 150℃ @ 80% of Max V DSS CES R 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices