SSF4606_15 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 4 Rev.1.0 SSF 4606 30V Complementary MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity

4606 SSF4606 SOP-8 Ø330mm 12mm 2500 units

ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25℃ 6.9 -6 Continuous Drain Current T A =70℃ I D 6.0 -5.0 A Pulsed Drain Current (Note 1) I DM 30 -30 A T A =25℃ 2.0 2.0 Maximum Power Dissipation T A =70℃ P D 1.44 1.44 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ THERMAL CHARACTERISTICS N-Ch 62.5 Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 62.5 /W℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS GENERAL FEATURES

  • N-Channel V DS = 30V,I D = 6.9A R DS(ON) < 42mΩ @ V GS =4.5V R DS(ON) < 28mΩ @ V GS =10V
  • P-Channel V DS = -30V,I D = -6A R DS(ON) < 58mΩ @ V GS =-4.5V R DS(ON) < 35mΩ @ V GS =-10V
  • High Power and current handing capability
  • Lead free product
  • Surface Mount Package Marking and pin Assignment SOP 8 T op V iew Schematic D iagram

DESCRIPTION

The SSF4606 uses advanced trench technology MOSFET to provide excellent R DS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. N-channel P-channel

www.goodark.com Page 2 of 4 Rev.1.0 SSF 4606 30V Complementary MOSFET V GS =0V I D =250μA N-Ch Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA P-Ch -30 V V DS =24V,V GS =0V N-Ch Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V P-Ch μA N-Ch ±100 Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V P-Ch ±100 nA ON CHARACTERISTICS (Note 3) V DS GS D =250μA N-Ch 1 1.9 3 Gate Threshold Voltage V GS(th) V DS GS D =-250μA P-Ch -1.2 -2 -2.4 V V GS =10V, I D =6.9A N-Ch 22.5 V GS =-10V, I D =-6.0A P-Ch 28 35 V GS =4.5V, I D =5A N-Ch 34.5 Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-5A P-Ch 44 58 mΩ V DS =5V,I D =6.9A N-Ch 10 15.4 Forward Transconductance g FS V DS =-5V,I D =-6A P-Ch S DYNAMIC PARAMETERS N-Ch 680 Input Capacitance C lss P-Ch 900 N-Ch 100 Output Capacitance C oss P-Ch 200 N-Ch Reverse Transfer Capacitance C rss N-Ch VGS=0V, VDS=15V, f=1MHz P-Ch VGS=0V, VDS=-15V, f=1MHz P-Ch 120 pF SWITCHING CHARACTERISTICS (Note 4) N-Ch 4.6 Turn-on Delay Time t d(on) P-Ch 7.7 nS N-Ch 4.1 Turn-on Rise Time t r P-Ch 5.7 nS N-Ch 20.6 Turn-Off Delay Time t d(off) P-Ch nS N-Ch 5.2 Turn-Off Fall Time t f N-Ch V DD =15V, R L =2.2Ω V GEN =10V,R GEN =3Ω P-Ch V DD =-15V, R L =2.7Ω V GEN =-10V,R GEN =3Ω P-Ch 9.5 nS N-Ch Total Gate Charge Q g P-Ch 9.6 nC N-Ch 1.8 Gate-Source Charge Q gs P-Ch 2.5 nC N-Ch 3.2 Gate-Drain Charge Q gd N-Ch V DS =15V,I D =6.9A, V GS =4.5V P-Ch V DS =-15V,I D =-6A, V GS =-4.5V P-Ch 4.5 nC

www.goodark.com Page 4 of 4 Rev.1.0 SSF 4606 30V Complementary MOSFET SOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact