SSF4004 SILIKRON | Alldatasheet
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©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 1 of5 SSF4004 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 200 A ID@Tc=ْC Continuous drain current,VGS@10V 140 IDM Pulsed drain current ① 800 PD@TC=ْC Power dissipation 238 W Linear derating factor 2.0 WْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 520 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.63 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 40 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 3.5 4 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 — 4.0 V VDS=VGS,ID=250μA IDSS Drain-to-Source leakage current — — 2 uA VDS=40V,VGS=0V — — 10 VDS=40V,VGS=0V,TJ=ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V SSF4004 TOP View (TO220) ID=200A BV=40V Rdson=4 mΩ（max.） Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF4004 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF4004 is assembled in high reliability and qualified assembly house. Application: Power switching application Commercial-industrial application
©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 2 of5 SSF4004 Qg Total gate charge — 90 — nC ID=30A VDD=30V VGS=10V Qgs Gate-to-Source charge — 14 — Qgd Gate-to-Drain("Miller") charge — 24 — td(on) Turn-on delay time — 18.2 — nS VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 15.6 — td(off) Turn-Off delay time — 70.5 — tf Fall time — 13.8 — Ciss Input capacitance — 3150 — pF VGS=0V VDS=25V f=1.0MHZ Coss Output capacitance — 300 — Crss Reverse transfer capacitance — 240 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current. (Body Diode) — — 200 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current . (Body Diode) ① — — 800 VSD Diode Forward Voltage — — 1.3 V TJ=ْC,IS=30A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS TJ=ْC,IF=57A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 107 — μC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit: Vdd RL RG1mA Vgs EAS test circuits: VDD BVdss L RG Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 20V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C
©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 3 of5 SSF4004 Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature Switch Waveforms: Switch Time Test Circuit：
©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 4 of5 SSF4004 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation 2009.7.10 Version: 1.1 page 5 of5 SSF4004 TO220 MECHANICAL DATA: