SSF3639C SILIKRON | Alldatasheet
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PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 3639C SSF3639C SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V TA=25℃ 6.3 -5 Continuous Drain Current TA=70℃ ID A Pulsed Drain Current (Note 1) IDM 20 -20 A TA=25℃ 1.6 2.0 Maximum Power Dissipation TA=70℃ PD W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃ THERMAL CHARACTERISTICS N-Ch 62.5 Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 62.5 /W℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS
DESCRIPTION
The SSF3639C uses advanced trench technology MOSFET to provide excellent and low gate charge. The RDS(ON) complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES
- N-Channel V = 30V,I DS D = 6.3A < 35.5mΩ @ VRDS(ON) GS=4.5V < 22mΩ @ VRDS(ON) GS=10V
- P-Channel V = -30V,IDS D = -5A < 87mΩ @ VRDS(ON) GS=-4.5V Marking and pin Assignment < 52mΩ @ VRDS(ON) GS=-10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package SOP-8 top view
VGS=0V ID=250μA N-Ch 30 Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA P-Ch -30 V VDS=24V,VGS=0V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V P-Ch -1 μA N-Ch ±100 Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V P-Ch ±100 nA ON CHARACTERISTICS (Note 3) VDS=VGS,ID=250μA N-Ch 1 1.9 3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA P-Ch -1 -1.8 -3 V VGS=10V, ID=6.3A N-Ch 19 22 VGS=-10V, ID=-5.0A P-Ch 39 52 VGS=4.5V, ID=5.5A N-Ch 25 35.5 Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4A P-Ch 62 87 mΩ VDS=10V,ID=6.3A N-Ch 10 Forward Transconductance gFS VDS=-5V,ID=-5A P-Ch 8 S DYNAMIC PARAMETERS N-Ch 620 Input Capacitance Clss P-Ch 700 N-Ch 118 Output Capacitance Coss P-Ch 120 N-Ch 85 Reverse Transfer Capacitance Crss N-Ch VGS=0V, VDS=15V, f=1MHz P-Ch VGS=0V, VDS=-15V, f=1MHz P-Ch 75 pF SWITCHING CHARACTERISTICS (Note 4) N-Ch 8 Turn-on Delay Time td(on) P-Ch 9 nS N-Ch 4 Turn-on Rise Time tr P-Ch 5 nS N-Ch 22 Turn-Off Delay Time td(off) P-Ch 30 nS N-Ch 4 Turn-Off Fall Time tf N-Ch VDS=15V, VGS=10V,RGEN=6Ω,ID=1A P-Ch VDD=-15V, ID=-1A, VGS=-10V,RGEN=6Ω P-Ch 15 nS N-Ch 10 Total Gate Charge Qg P-Ch 14.7 nC N-Ch 2 Gate-Source Charge Qgs P-Ch 2 nC N-Ch 2 Gate-Drain Charge Qgd N-Ch VDS=15V,ID=6.3A, VGS=10V P-Ch VDS=-15V,ID=-5A, VGS=-10V P-Ch 3.8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS VGS=0V,IS=1.3A N-Ch 0.8 1.2 V Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A P-Ch -0.8 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum rati ngs, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of an y and all Silikron products described or contained here in stipulate the performance, characteristics, and functions of the described products in the independent state, and are no t guarantees of the performanc e, characteristics, and functions of the described products as moun ted in the customer’s products or equipm ent. To verify symptoms and states that cannot be evaluated in an indepen dent device, the customer should always evaluate and test devices mounted in the customer ’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability prod ucts. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, an d structural design. ■ In the event that any or all Silikron products(including te chnical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, su ch products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be repro duced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any informat ion storage or retrieval system, or other wise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, et c. When designing equipment, re fer to the "Delivery Specific ation" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specificat ions and information herein are subject to change without notice
Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.