SSF3639C GOOD-ARK | Alldatasheet

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www.goodark.com Page 1 of 4 Rev.1.1 SSF3639C 30V Complementary MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 3639C SSF3639C SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25℃ 6.3 -5 Continuous Drain Current T A =70℃ I D A Pulsed Drain Current (Note 1) I DM 20 -20 A T A =25℃ 1.6 2.0 Maximum Power Dissipation T A =70℃ P D W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 THERMAL CHARACTERISTICS N-Ch 62.5 Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 62.5 /W℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS GENERAL FEATURES N-Channel V DS = 30V,I D = 6.3A R DS(ON) < 35.5mΩ @ V GS =4.5V R DS(ON) < 22mΩ @ V GS =10V P-Channel V DS = -30V,I D = -5A R DS(ON) < 87mΩ @ V GS =-4.5V R DS(ON) < 52mΩ @ V GS =-10V High Power and current handing capability Lead free product Surface Mount Package Marking and P in Assignment SOP T op V iew Sche matic D iagram

DESCRIPTION

The SSF3639C uses advanced trench technology MOSFET to provide excellent R DS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. N-channel P-channel

www.goodark.com Page 2 of 4 Rev.1.1 SSF3639C 30V Complementary MOSFET V GS =0V I D =250μA N-Ch Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA P-Ch -30 V V DS =24V,V GS =0V N-Ch Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V P-Ch μA N-Ch ±100 Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V P-Ch ±100 nA ON CHARACTERISTICS (Note 3) V DS GS D =250μA N-Ch 1 1.9 Gate Threshold Voltage V GS(th) V DS GS D =-250μA P-Ch -1 -1.8 V V GS =10V, I D =6.3A N-Ch 19 22 V GS =-10V, I D =-5.0A P-Ch 39 52 V GS =4.5V, I D =5.5A N-Ch 25 35.5 Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-4A P-Ch 62 87 mΩ V DS =10V,I D =6.3A N-Ch Forward Transconductance g FS V DS =-5V,I D =-5A P-Ch S DYNAMIC PARAMETERS N-Ch 620 Input Capacitance C lss P-Ch 700 N-Ch 118 Output Capacitance C oss P-Ch 120 N-Ch Reverse Transfer Capacitance C rss N-Ch V GS =0V, V DS =15V, f=1MHz P-Ch V GS =0V, V DS =-15V, f=1MHz P-Ch pF SWITCHING CHARACTERISTICS (Note 4) N-Ch Turn-on Delay Time t d(on) P-Ch nS N-Ch Turn-on Rise Time t r P-Ch nS N-Ch Turn-Off Delay Time t d(off) P-Ch nS N-Ch Turn-Off Fall Time t f N-Ch V DS =15V, V GS =10V,R GEN =6Ω,I D =1A P-Ch V DD =-15V, I D =-1A, V GS =-10V,R GEN =6Ω P-Ch nS N-Ch Total Gate Charge Q g P-Ch 14.7 nC N-Ch Gate-Source Charge Q gs P-Ch nC N-Ch Gate-Drain Charge Q gd N-Ch V DS =15V,I D =6.3A, V GS =10V P-Ch V DS =-15V,I D =-5A, V GS =-10V P-Ch 3.8 nC

www.goodark.com Page 3 of 4 Rev.1.1 SSF3639C 30V Complementary MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS V GS =0V,I S =1.3A N-Ch 0.8 1.2 V Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A P-Ch -0.8 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.

www.goodark.com Page 4 of 4 Rev.1.1 SSF3639C 30V Complementary MOSFET SOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane.CT 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact