SSF3637S SILIKRON | Alldatasheet
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Technical content
PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity SSF3637S SSF3637S SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) -6.6 A ID(70℃) -5.2 A IDM -30 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 75 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 V GENERAL FEATURES
- VDS =- 30V,ID =-10A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
DESCRIPTION
The SSF3637S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Application
- PWM applications
- Load switch
- Power management Schematic diagram Marking and pin Assignment SOP-8 top view D G S
Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ± 100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.8 -2.1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4.0A 55 70 mΩ VGS=-10V, ID=-6.6A 37 45 mΩ Forward Transconductance gFS VDS=-5V,ID=-6.6A 10 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-15V,VGS=0V, F=1.0MHz 700 PF Output Capacitance Coss 110 PF Reverse Transfer Capacitance Crss 80 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) VDS=-15V,VGS=-10V,RGEN=3Ω ID=1A 9 nS Turn-on Rise Time tr 5 nS Turn-Off Delay Time td(off) 28 nS Turn-Off Fall Time tf 13 nS Total Gate Charge Qg VDS=-15V,ID=-6.6A,VGS=-10V 15 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 4 nC Body Diode Reverse Recovery Time Trr IF=-6.6A, dI/dt=100A/µs 24 nS Body Diode Reverse Recovery Charge Qrr 15 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -0.7 -1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and /or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the indep endent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high -quality high -reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be repr oduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permissio n of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equip ment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.