SSF3637 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.0 SSF 3637 30V Dual P-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3637 SSF3637 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V I D -5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -20 A Maximum Power Dissipation P D 2.0 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 62.5 /W℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 V Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V ±100 nA GENERAL FEATURES DS = -30V,I D = -5A R DS(ON) < 87mΩ @ V GS =-4.5V R DS(ON) < 52mΩ @ V GS =-10V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
APPLICATIONS
- Battery protection
- Load switch
- Power management Marking and P in Assignment D1 D2 S1 S2 Schematic D iagram SOP T op V iew
www.goodark.com Page 2 of 4 Rev.1.0 SSF 3637 30V Dual P-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS , I D =-250μA -1 -1.8 -3 V V GS =-10V, I D =-5A 39 52 Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-4A 67 87 mΩ Forward Transconductance g FS V DS =-5V, I D =-5A 8 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 700 PF Output Capacitance C oss 120 PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz 75 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 9 nS Turn-on Rise Time t r 5 nS Turn-Off Delay Time t d(off) 30 nS Turn-Off Fall Time t f V DD =-15V, I D =-1A V GS =-10V,R GEN =6Ω 15 nS Total Gate Charge Q g 14.7 nC Gate-Source Charge Q gs 2 nC Gate-Drain Charge Q gd V DS =-15V, I D =-5A,V GS =-10V 3.8 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A -0.8 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SSF 3637 30V Dual P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.