SSF3620 GOOD-ARK | Alldatasheet
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- PDF pages: 6
Technical content
www.goodark.com Page 1 of 6 Rev.2.0 SSF 30V Dual N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3620 SSF3620 SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V I D （25 7 A I D （70 5.8 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 25 A Maximum Power Dissipation P D 2 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V 1 μA GENERAL FEATURES
- V DS = 30V,I D =7A R DS(ON) < 30mΩ @ V GS =4.5V R DS(ON) < 18.5mΩ @ V GS =10V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF3620 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
APPLICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment S OP T op V iew
www.goodark.com Page 2 of 6 Rev.2.0 SSF 30V Dual N-Channel MOSFET Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1 1.5 2 V V GS =4.5V, I D =3.5A 21 30 mΩ Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =7A 16 18.5 mΩ Forward Transconductance g FS V DS =5V,I D =11A 10 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 600 PF Output Capacitance C oss 75 PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz 45 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 4 nS Turn-on Rise Time t r 12 nS Turn-Off Delay Time t d(off) 22 nS Turn-Off Fall Time t f V DS =15V,V GS =10V,R GEN =6Ω I D =1A 4 nS Total Gate Charge Q g 12 nC Gate-Source Charge Q gs 1.2 nC Gate-Drain Charge Q gd V DS =15V,I D =7A,V GS =10V 3.8 nC Body Diode Reverse Recovery Time T rr 13 nS Body Diode Reverse Recovery Charge Q rr I F =7A, dI/dt=100A/µs 7 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =3A 0.7 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 6 of 6 Rev.2.0 SSF 30V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.