SSF3611E

SSF3611E SILIKRON | Alldatasheet

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Main Product Characteristics: VDSS -30 V RDS(on) 10.6 m Ω(typ.) ID -12A Marking and pin Assignment Schematic diagram SOP-8 Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① -12 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① -7.4 IDM Pulsed Drain Current② -48 A PD @TC = 25°C Power Dissipation③ 2 W VDS Drain-Source Voltage -30 V VGS Gate-to-Source Voltage ± 20 V TJ T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characterizes Typ. Max. Units RθJA Junction-to-ambient (t ≤ 10s) ④ — 62.5 ℃/W www.silikron.com

Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage －30 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 14.1 16 mΩ VGS =-4.50V, ID =-7.50A VGS(th) Gate threshold voltage －1 — －2 V V DS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — -1 μA V DS = -30V,VGS = 0V — — 10 V GS = 20V IGSS Gate-to-Source forward leakage — — -10 μA VGS = -20V Qg Total gate charge — 55 — Qgs Gate-to-Source charge — 3.5 — Qgd Gate-to-Drain("Miller") charge — 18 — nC ID = -10A, VDS=-25V, VGS = -10V td(on) Turn-on delay time — 8.0 — tr Rise time — 5.8 — td(off) Turn-Off delay time — 56 — tf Fall time — 38 — ns VGS=-10V, VDS=-15V, RL=15Ω, RGEN=3Ω Ciss Input capacitance — 3224 — Coss Output capacitance — 459 — Crss Reverse transfer capacitance — 425 — pF VGS = 0V VDS = -15V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -12 A ISM Pulsed Source Current (Body Diode) — — -48 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — -0.73 -1.2 V IS=-2.1A, VGS=0V trr Reverse Recovery Time — 16 — ns Qrr Reverse Recovery Charge — 5.9 — uC TJ = 25°C, I F =-10A, di/dt = 100A/μs www.silikron.com

Test circuits and Waveforms www.silikron.com S w i t c h t i m e t e s t c i r c u i t : S w i t c h W a v e f o r m s : Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.

Mechanical Data： Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.280 1.480 0.050 0.058 b c 0.173 0.233 0.007 0.009 D 4.800 5.000 0.189 0.197 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e L 0.400 1.250 0.016 0.050 Symbol Dimension In Millimeters Dimension In Inches 1.27TYP 0.050TYP 0.406 0.016 SOP8 PACKAGE OUTLINE DIMENSION www.silikron.com

www.silikron.com Ordering and Marking Information Device Marking: SSF3611E Package (Available) SOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOP-8 2500 2 5000 8 40000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j=125℃ or 150℃ @ 80% of Max V DSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices

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