SSF3611E GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 5 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① -12 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① -7.4 I DM Pulsed Drain Current② -48 A P D @TC = 25°C Power Dissipation③ 2 W V DS Drain-Source Voltage -30 V V GS Gate-to-Source Voltage ± 20 V T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJA Junction-to-ambient (t ≤ 10s) ④ — 62.5 ℃/W V DSS -30 V R DS (on) 10.6 mΩ(typ.) I D -12A Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. SOP-8

www.goodark.com Page 2 of 5 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage -30 — — V V GS = 0V, ID = 250μA — 10.6 13 V GS =-10.0V, I D =-10.0A R DS(on) Static Drain-to-Source on-resistance — 14.1 16 mΩ V GS =-4.50V, I D =-7.50A V GS(th) Gate threshold voltage 1 — 2 V V DS = V GS , I D = 250μA I DSS Drain-to-Source leakage current — — -1 μA V DS = -30V,V GS = 0V 10 V GS = 20V I GSS Gate-to-Source forward leakage -10 μA V GS = -20V Q g Total gate charge — 55 — Q gs Gate-to-Source charge — 3.5 — Q gd Gate-to-Drain("Miller") charge — 18 — nC I D = -10A, V DS =-25V, V GS = -10V t d(on) Turn-on delay time — 8.0 — t r Rise time — 5.8 — t d(off) Turn-Off delay time — 56 — t f Fall time — 38 — ns V GS =-10V, VDS=-15V, R L =15Ω, R GEN =3Ω C iss Input capacitance — 3224 — C oss Output capacitance — 459 — C rss Reverse transfer capacitance — 425 — pF V GS = 0V V DS = -15V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — -12 A I SM Pulsed Source Current (Body Diode) — — -48 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — -0.73 -1.2 V I S =-2.1A, V GS =0V t rr Reverse Recovery Time — 16 — ns Q rr Reverse Recovery Charge — 5.9 — uC T J = 25°C, I F =-10A, di/dt = 100A/μs

www.goodark.com Page 3 of 5 Rev.1.0 Test Circuits and Waveforms Switch time test circuit: Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C. ⑥ The maximum current rating is limited by bond-wires.

www.goodark.com Page 4 of 5 Rev.1.0 Mechanical Data Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.280 1.480 0.050 0.058 b c 0.173 0.233 0.007 0.009 D 4.800 5.000 0.189 0.197 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e L 0.400 1.250 0.016 0.050 Symbol Dimension In Millimeters Dimension In Inches 1.27TYP 0.050TYP 0.406 0.016 SOP8 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 5 of 5 Rev.1.0 Ordering and Marking Information Device Marking: SSF3611E Package (Available) SOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOP-8 2500 2 5000 8 40000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices