SSF3610E GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 6 Rev.2.1 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 18 I DM Pulsed Drain Current② 72 A P D @TC = 25°C Power Dissipation③ 3.1 W V DS Drain-Source Voltage 25 V V GS Gate-to-Source Voltage ± 12 V T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJA Junction-to-ambient (t ≤ 10s) ④ — 40 ℃/W V DSS 25 V R DS (on) 6.8 mΩ(typ.) I D 18A SOP-8 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. SSF3610E SSF3610E

www.goodark.com Page 2 of 6 Rev.2.1

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 25 — — V V GS = 0V, ID = 250μA — 6.8 10 V GS =10V, I D =5A — 7.6 12 V GS =8V, I D =6A R DS(on) Static Drain-to-Source on-resistance — 10.4 14 mΩ V GS =4.5V, I D =4A V GS(th) Gate threshold voltage 1 1.3 2.5 V V DS = V GS , I D = 250μA I DSS Drain-to-Source leakage current — — 1 μA V DS = 25V,V GS = 0V 10 V GS = 10V I GSS Gate-to-Source forward leakage -10 μA V GS = -10V Q g Total gate charge — 15.4 — Q gs Gate-to-Source charge — 3.6 — Q gd Gate-to-Drain("Miller") charge — 5.8 — nC I D = 4A, V DS =10V, V GS = 4.5V t d(on) Turn-on delay time — 6.6 — t r Rise time — 4.6 — t d(off) Turn-Off delay time — 33.0 — t f Fall time — 20.3 — ns V GS =10V, VDS=10V, R L =10Ω, R GEN =3Ω C iss Input capacitance — 1260 — C oss Output capacitance — 353 — C rss Reverse transfer capacitance — 295 — pF V GS = 0V V DS = 10V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 18 A I SM Pulsed Source Current (Body Diode) — — 72 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.75 0.9 V I S =1.7A, V GS =0V t rr Reverse Recovery Time — 10.5 — ns Q rr Reverse Recovery Charge — 2.6 — uC T J = 25°C, I F =15A, di/dt = 100A/μs

www.goodark.com Page 3 of 6 Rev.2.1 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C.

Figure 2. Typical Capacitance Vs. Drain-to-Source Voltage Figure 1.Typical Output Characteristics

www.goodark.com Page 5 of 6 Rev.2.1 Mechanical Data SOP-8 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 6 of 6 Rev.2.1 Ordering and Marking Information Device Marking: SSF3610E Package (Available) SOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOP-8 2500 2 5000 8 40000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices