SSF3608-C SECOS | Alldatasheet

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Technical content

-1.4A, -20V , R DS(O/glyph1197) 300m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 10-Dec-2018 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 -20V/ -1.4A R DS(ON) ≦300mΩ@V GS = -4.5V RDS(ON) ≦390mΩ@V GS = -2.5V RDS(ON) ≦700mΩ@V GS = -1.8V /circle6 Reliable and Rugged /circle6 Green Device Available APPLICATION /circle6 Interfacing /circle6 Switching MARKING

PACKAGE INFORMATION

(T A=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 2,V GS =4.5V T A=25°C I D -1.4 A Pulsed Drain Current 1 IDM -2.8 A Power Dissipation 2 T A=25°C P D 350 mW Operating Junction and Storage Temperature TJ, T STG 150, -55~150 °C Thermal Resistance Ratings Thermal Resistance Junction-ambient 2 357 Thermal Resistance Junction-ambient 3 RθJA 625 °C/W Part Number Type SSF3608-C Lead (Pb)-free and Halogen-free Top View A L C B D G H JF K E 1 2 SOT-323 A 1.80 2.20 G 0.1 REF. B 1.80 2.55 H 0.525 REF. C 1.1 1.4 J 0.05 0.25 D 0.80 1.15 K 0.8 TYP. E 1.20 2.00 L 0.65 TYP. F 0.15 0.50 3608

-1.4A, -20V , R DS(O/glyph1197) 300m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 10-Dec-2018 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D= -250µA Gate-Threshold Voltage V GS(th) -0.3 - -1 V V DS =VGS , I D= -1mA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±8V Drain-Source Leakage Current I DSS - - -1 µA V DS = -20V, V GS =0 - - 390 V GS = -2.5V, I D= -1.2A Static Drain-Source On-Resistance 4 R DS(ON) - - 700 mΩ VGS = -1.8V, I D= -0.9A Total Gate Charge Q g - 2 - Gate-Source Charge Q gs - 0.36 - Gate-Drain (“Miller”) Charge Q gd - 0.58 - nC IDS= -0.7A VDS = -10V VGS = -4.5V Turn-on Delay Time T d(on) - 8.7 - Rise Time Tr - 61.2 - Turn-off Delay Time T d(off) - 9.8 - Fall Time Tf - 38.8 - nS VDD= -15V IDS= -1A VGS = -4.5V RGEN =5Ω Input Capacitance C iss - 122 - Output Capacitance C oss - 29 - Reverse Transfer Capacitance C rss - 26 - pF VDS = -15V VGS =0 f=1MHz Source-Drain Diode Diode Forward Voltage 4 V SD - - -1.2 V I S= -500mA, V GS =0 Notes: 1. Pulse width ≦10µs, duty cycle ≦1%. 2. The data tested by surface mounted on a 1 inch2 FR4 board with 2OZ copper. 3. Surface mounted on FR4 board. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.

-1.4A, -20V , R DS(O/glyph1197) 300m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 10-Dec-2018 Rev. A Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

-1.4A, -20V , R DS(O/glyph1197) 300m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 10-Dec-2018 Rev. A Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

-1.4A, -20V , R DS(O/glyph1197) 300m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 10-Dec-2018 Rev. A Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES