SSF3341L SILIKRON | Alldatasheet
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G S The SSF3341L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES Schematic diagram ● V = -30V,I PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 3341L SSF3341L SOT-23-3 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V ID（25℃） -4.2 A ID（70℃） -3.5 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM -30 A Maximum Power Dissipation PD 1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 /W℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA DS D = -4.2A < 120mΩ @ VRDS(ON) GS=-2.5V < 65mΩ @ VRDS(ON) GS=-4.5V < 50mΩ @ VRDS(ON) GS=-10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package Marking and pin Assignment Application
- PWM applications
- Load switch
- Power management SOT-23-3 top view
ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V =VGS(th) DS GS,ID=-250μA -0.7 -2 V V =-10V, IGS D=-4.2A 42 50 V =-4.5V, IGS D=-4A 53 65 Drain-Source On-State Resistance R mΩ DS(ON) V =-2.5V, IGS D=-1A 80 120 Forward Transconductance g V =-5V,IFS DS D=-5A 10 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C 950 PF lss Output Capacitance Coss 120 PF V =-15V,V Reverse Transfer Capacitance Crss DS GS=0V, F=1.0MHz 70 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t 6.5 nS d(on) Turn-on Rise Time t 3 nS r Turn-Off Delay Time td(off) 30 nS V =-15V,IDD D=-3.2A V =-10V,R Turn-Off Fall Time tf GS GEN=6Ω 12 nS Total Gate Charge Q 9.6 nC g Gate-Source Charge Qgs 2 nC V =-15V,I Gate-Drain Charge Qgd DS D=-4A,VGS=-4.5V 2.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V V =0V,I =-1A -1.2 V SD GS S NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
SOT23-3 PACKAGE INFORMATION NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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