SSF3341L GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
www.goodark.com Page 1 of 6 Rev.2.0 SSF 3341L 30V P-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 3341L SSF3341L SOT-23-3 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±12 V I D （25 -4.2 A I D （70 -3.5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -30 A Maximum Power Dissipation P D 1 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 90 /W ℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 V Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V ±100 nA GENERAL FEATURES
- V DS = -30V,I D = -4.2A R DS(ON) < 120mΩ @ V GS =-2.5V R DS(ON) < 65mΩ @ V GS =-4.5V R DS(ON) < 50mΩ @ V GS =-10V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF3341L uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. APPL ICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment SOT T op V iew D G S
www.goodark.com Page 2 of 6 Rev.2.0 SSF 3341L 30V P-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -0.7 -2 V V GS =-10V, I D =-4.2A 42 50 V GS =-4.5V, I D =-4A 53 65 Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-1A 80 120 mΩ Forward Transconductance g FS V DS =-5V,I D =-5A 10 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 950 PF Output Capacitance C oss 120 PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz 70 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 6.5 nS Turn-on Rise Time t r 3 nS Turn-Off Delay Time t d(off) 30 nS Turn-Off Fall Time t f V DD =-15V,I D =-3.2A V GS =-10V,R GEN =6Ω 12 nS Total Gate Charge Q g 9.6 nC Gate-Source Charge Q gs 2 nC Gate-Drain Charge Q gd V DS =-15V,I D =-4A,V GS =-4.5V 2.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A -1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 6 of 6 Rev.2.0 SSF 3341L 30V P-Channel MOSFET SOT23-3 PACKAGE INFORMATION NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.