SSF3324 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 8 Rev.1.1 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 5.8 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 4.2 I DM Pulsed Drain Current A P D @TC = 25°C Power Dissipation 1.4 W V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 12 V T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C V DSS 30V R DS (on) 26.5mohm(typ.) I D 5.8A Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. SOT23

www.goodark.com Page 2 of 8 Rev.1.1 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJA Junction-to-ambient (t ≤ 10s) — 90 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 30 — — V V GS = 0V, I D = 250μA — 26.5 35 V GS =4.5V,I D = 2A R DS(on) Static Drain-to-Source on-resistance — 43.7 — mΩ T J = 125℃ — 31.1 40 V GS =2.5V,I D =1.5A R DS(on) Static Drain-to-Source on-resistance — 50.2 — mΩ T J = 125℃ — 44.9 50 V GS =1.8V,I D =1A R DS(on) Static Drain-to-Source on-resistance — 62.1 — mΩ T J = 125℃ 0.7 — 1.4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 0.63 — V T J = 125℃ — — 1 V DS = 24V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =12V I GSS Gate-to-Source forward leakage -100 nA V GS = -12V Q g Total gate charge — Q gs Gate-to-Source charge — Q gd Gate-to-Drain("Miller") charge — nC I D = 5.8A, V DS =15V, V GS = 4.5V t d(on) Turn-on delay time — t r Rise time — t d(off) Turn-Off delay time — t f Fall time — ns V GS =10V, V DS =15V, R GEN =3Ω， C iss Input capacitance — 1245 C oss Output capacitance — C rss Reverse transfer capacitance — pF V GS = 0V, V DS =15V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 5.8 A I SM Pulsed Source Current (Body Diode) — — 23 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.72 1.2 V I S =1A, V GS =0V

www.goodark.com Page 3 of 8 Rev.1.1 Test Circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C.

www.goodark.com Page 6 of 8 Rev.1.1 Figure8. Normalized Maximum Transient Thermal Impedance

www.goodark.com Page 7 of 8 Rev.1.1 Mechanical Data Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0 Symbol Dimension In Millimeters Dimension In Inches 0.95TYP 0.037TYP 0.55REF 0.022REF SOT-23 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 8 of 8 Rev.1.1 Ordering and Marking Information Device Marking: 3324 Package (Available) SOT23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOT23 3000 10 30000 4 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ to 150℃ @ 80% of Max V DSS CES R 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices