SSF3314E GOOD-ARK | Alldatasheet
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Technical content
www.goodark.com Page 1 of 4 Rev.1.0 SSF 3314E 30V N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3314E SSF3314E DFN3×3-8L - - - ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 V I D 8 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 45 A Maximum Power Dissipation P D 1.7 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 40 /W ℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V 1 μA Pin Assignment DFN3×3-8L Bottom View GENERAL FEATURES
- V DS = 30V,I D = 8A R DS(ON) < 39mΩ @ V GS =2.5V R DS(ON) < 28mΩ @ V GS =3.1V R DS(ON) < 24mΩ @ V GS =4.0V R DS(ON) < 23mΩ @ V GS =4.5V R DS(ON) < 18mΩ @ V GS =10V ESD Rating：2000V HBM
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF3314E uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V GS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic D iagram
www.goodark.com Page 2 of 4 Rev.1.0 SSF 3314E 30V N-Channel MOSFET Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V 10 uA Gate-Source Breakdown Voltage BV GSO V DS =0V, I G =±250uA ±12 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.6 1 1.5 V V GS =10V, I D =8A 14 18 V GS =4.5V, I D =6A 17 23 V GS =4.0V, I D =4A 18 24 V GS =3.1V, I D =4A 20 28 Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =3A 23 39 mΩ Forward Transconductance g FS V DS =5V,I D =8A 17 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 870 PF Output Capacitance C oss 130 PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz 100 PF Gate resistance Rg V DS =0V,V GS =0V, F=1.0MHz 1.5 Ω SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 4 nS Turn-on Rise Time t r 10 nS Turn-Off Delay Time t d(off) 28 nS Turn-Off Fall Time t f V DD =15V,V GS =10V, R GEN =3Ω，R L =1.25Ω 7 nS Total Gate Charge Q g 10.5 nC Gate-Source Charge Q gs 1.9 nC Gate-Drain Charge Q gd V DS =15V,I D =8A,V GS =4.5V 4.1 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A 0.76 0.9 V Diode Forward Current (Note 2) I S 4.5 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SSF 3314E 30V N-Channel MOSFET DFN3×3-8L PACKAGE INFORMATION COMMON DIMENSIONS(MM) PKG. W ： VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 － 0.05 A3 0.2REF. D 2.95 3.00 3.05 E 2.95 3.00 3.05 b 0.25 0.30 0.35 L 0.30 0.40 0.50 D2 2.30 2.45 2.55 E2 2.50 1.65 1.75 e 0.65BSC NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. TOP VIEW BOTTOM VIEW SIDE VIEW