SSF32E0E GOOD-ARK | Alldatasheet
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www.goodark.com Page 1 of 4 Rev.1.2 SSF3 E0E 30V N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity S32E SSF32E0E SOT-523 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V I D 0.1 I D (70℃) 0.07 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 0.4 A Maximum Power Dissipation P D 0.2 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 400 /W ℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 V GENERAL FEATURES
- V DS =30V,I D = 0.1A R DS(ON) < 8Ω @ V GS =4V R DS(ON) < 13Ω @ V GS =2.5V ESD Rating：1000V HBM
- High Power and current handing capability
- Lead free product
- Surface Mount Package Schematic D iagram Marking and P in Assignment SOT T op V iew APPLICATION S
- Direct Logic-Level Interface: TTL/CMOS
- Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
- Battery Operated Systems
- Solid-State Relays
www.goodark.com Page 2 of 4 Rev.1.2 SSF3 E0E 30V N-Channel MOSFET Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V 1 μA V GS =±5V,V DS =0V 100 nA V GS =±10V,V DS =0V 150 nA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V 10 uA Gate-Source Breakdown Voltage BV GSO V DS =0V, I G =±250uA ±20 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.8 1.5 V V GS =4V, I D =0.01A 5 8 Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =0.001A 7 13 Ω Forward Transconductance g FS V DS =3V,I D =0.01A 0.02 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 45 PF Output Capacitance C oss 12 PF Reverse Transfer Capacitance C rss V DS =5V,V GS =0V, F=1.0MHz 7 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 15 nS Turn-Off Delay Time t d(off) V DD =5V,V GS =5V, R GEN =10Ω，R L =500Ω I D =0.01A 75 nS DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =0.01A 1.3 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.2 SSF3 E0E 30V N-Channel MOSFET SOT-523 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.700 0.900 A1 0.000 0.100 A2 0.700 0.800 b1 0.150 0.250 b2 0.250 0.350 c 0.100 0.200 D 1.500 1.700 E 0.700 0.900 E1 1.450 1.750 e 0.500TYP e1 0.900 1.100 L 0.400REF L1 0.260 0.460 θ 0° 8°