SSF318WJ-C SECOS | Alldatasheet
Document overview
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Technical content
50V , 220mA, R DS(ON) 3.5 Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 09-Nov-2017 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SS SOT-323 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
/uni25CF High Density Cell Design for Extremely Low R DS(ON) /uni25CF Rugged and Relaible APPLICATION /uni25CF Direct Logic-Level Interface: TTL/CMOS /uni25CF Drivers: Relays, Solenoids, Lamps, Hammers; Display, Memories,Transistors, etc. /uni25CF Battery Operated Systems /uni25CF Solid-State Relays MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 220 mA Power Dissipation PD 0.3 W Maximum Junction-Ambient R θJA 417 ° C/W Operating Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Part Number Type SSF318WJ-C Lead (Pb)-free and Halogen-free Top View A L C B D G H JF K E 1 2 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.1 REF. B 1.80 2.55 H 0.525 REF. C 1.1 1.4 J 0.05 0.25 D 0.80 1.15 K 0.8 TYP. E 1.20 2.00 L 0.65 TYP. F 0.15 0.50
50V , 220mA, R DS(ON) 3.5 Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 09-Nov-2017 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 50 - - V V GS =0, I D =250 µA Gate-Threshold Voltage 1 V GS(th) 0.8 - 1.5 V V DS =V GS , I D =1mA Gate-Body Leakage Current I GSS - - ±100 nA V DS =0, VGS = ±20V Drain-Source Leakage Current I DSS - - 0.5 µA V DS =50V, V GS =0 - - 100 nA V DS =30V, V GS =0 Drain-Source On-Resistance 1 R DS(ON) - - 3.5 Ω VGS =10V, I D =220mA - - 6 V GS =4.5V, I D =220mA Forward Transconductance 1 g fs 0.12 - - S V DS =10V, I D =220mA Turn-on Delay Time 1 T d(on) - 5 - nS VDD =30V VDS =10V R GEN =6Ω ID =0.29A Rise Time 1 T r - 18 - Turn-off Delay Time 1 T d(off) - 36 - Fall Time 1 T f - 14 - Input Capacitance C iss - 27 - pF VGS =0, VDS =25V, f=1MHz Output Capacitance C oss - 13 - Reverse Transfer Capacitance C rss - 6 - Drain-Source Diode Characteristics Diode Forward Voltage 1 V SD - - 1.4 V I S=0.44V, VGS =0 Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.
50V , 220mA, R DS(ON) 3.5 Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 09-Nov-2017 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE