SSF3134KW SECOS | Alldatasheet

Document overview

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Technical content

0.75A, 20V , R DS(ON) 380 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 10-Jul-2017 Rev. D Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SSF3134KW provides the designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Lower gate charge /circle6 Simple drive requirement /circle6 Fast switching characteristic MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current I D 0.75 A Pulsed Drain Current 1 IDM 3 A Maximum Power Dissipation 2 P D 200 mW Thermal Resistance from Junction to Ambient R θJA 625 ° C / W Operating Junction and Storage Temperature T J, T STG 150, -55~150 ° C SOT-323 34K Top View A L C B D G H JF K E 1 2 A 1.80 2.20 G 0.1 REF. B 1.80 2.45 H 0.525 REF. C 1.1 1.4 J 0.08 0.25 D 0.80 1.10 K 0.8 TYP. E 1.20 1.40 L 0.65 TYP. F 0.15 0.40

0.75A, 20V , R DS(ON) 380 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 10-Jul-2017 Rev. D Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV DSS 20 - - V V GS =0, I D =250 µA Gate-Threshold Voltage 3 V GS(th) 0.35 - 1.1 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±20 µA V DS =0, VGS = ±10V Drain-Source Leakage Current I DSS - - 1 µA V DS =20V, V GS =0 Forward Transconductance g fs 1 - - S V DS =10V, I D =0.8A - - 380 V GS =4.5V, I D =650mA - - 450 V GS =2.5V, I D =550mA Static Drain-Source On-Resistance 3 R DS(ON) - - 800 m Ω VGS =1.8V, I D =450mA Switching Characteristics Input Capacitance C iss - 120 - Output Capacitance C oss - 20 - Reverse Transfer Capacitance C rss - 15 - pF VDS =16V VGS =0 f=1MHz Total Gate Charge Q g - 0.88 - Gate-Source Charge Q gs - 0.14 - Gate-Drain Charge Q gd - 0.29 - nC ID =0.606A VDS =10V VGS =4.5V Turn-on Delay Time T d(on) - 6.7 - Rise Time T r - 4.8 - Turn-off Delay Time T d(off) - 17.3 - Fall Time T f - 7.4 - nS VDD =10V VGEN =4.5V R G =10 Ω ID =0.5A Drain-Source Diode Characteristics Diode Forward Voltage 3 V SD - - 1.2 V I S=0.15A, V GS =0 Notes: 1. Repetitive Rating: Pulse width is limited by the maximum junction temperature. 2. This test is performed without heat sink at TA=25° C. 3. Pulse Test: Pulse width ≤300µs, duty cycle ≤0.5%.

0.75A, 20V , R DS(ON) 380 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 10-Jul-2017 Rev. D Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

0.75A, 20V , R DS(ON) 380 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 10-Jul-2017 Rev. D Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES