SSF3056C GOOD-ARK | Alldatasheet

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Technical content

30V Complementary MOSFET (Preliminary) www.goodark.com Page 1 of 5 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Max. Symbol Parameter N-channel P-channel Units I D @ TC = 25°C Continuous Drain Current, V GS @ 4.5V① 5 -4.5 I D @ TC = 100°C Continuous Drain Current, V GS @ 4.5V① 4.2 -3.4 I DM Pulsed Drain Current② 18.8 -12.5 A P D @TC = 25°C Power Dissipation③ 2.1 1.8 W V DS Drain-Source Voltage 30 -30 V V GS Gate-to-Source Voltage ± 12 ± 12 V T J T STG Operating Junction and Storage Temperature Range -55 to + 150 -55 to + 150 NMOS PMOS V DSS 30V -30V R DS (on) 37mohm(typ.) 68mohm(typ.) I D 5A -4.5A DFN2X3-8L Schematic Diagram  Advanced trench MOSFET process technology  Special designed for buck-boost circuit, DSC, portable devices and general purpose applications  Ultra low on-resistance with low gate charge  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications. NMOS PMOS NMOS PMOS

30V Complementary MOSFET (Preliminary) www.goodark.com Page 2 of 5 Rev.1.0 Thermal Resistance Max. Symbol Characteristics Typ. N-channel P-channel Units Junction-to-ambient (t ≤ 10s) ④ — 60 95 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions 30 — — V GS = 0V, ID = 250μA N-channel 27.5 — — T J = 125°C -30 — — V GS = 0V, ID = -250μA V (BR)DSS Drain-to-Source breakdown voltage P-channel -27.5 — — V T J = 125°C N-channel — 37 55 V GS =4.5V,I D = 4.8A P-channel 68 85 V GS =-4.5V,I D = -2.3A N-channel 50 90 V GS =3.5V,I D = 3.8A R DS(on) Static Drain-to-Source on-resistance P-channel 84 115 mΩ V GS =-3.5V,I D = -1.8A N-channel 0.7 1.48 2 V DS = V GS , I D = 250μA P-channel 0.7 1.12 2 T J = 125°C N-channel -0.7 -1.49 -2 V DS = V GS , I D = -250μA V GS(th) Gate threshold voltage P-channel -0.7 -1.26 -2 V T J = 125°C N-channel — — 1 V DS = 30V,V GS = 0V I DSS Drain-to-Source leakage current P-channel — — -1 μA V DS = -30V,V GS = 0V N-channel 100 V GS =12V N-channel -100 V GS = -12V P-channel 100 V GS =12V I GSS Gate-to-Source forward leakage P-channel -100 nA V GS = -12V Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions — — 5 I S Continuous Source Current (Body Diode) — — -4.5 A — — 18.8 MOSFET symbol showing the integral reverse p-n junction diode. I SM Pulsed Source Current (Body Diode) — — -12.5 A — 0.82 1.2 I S =2.4A, V GS =0V V SD Diode Forward Voltage — -0.84 -1.2 V I S =-1.5A, V GS =0V

30V Complementary MOSFET (Preliminary) www.goodark.com Page 3 of 5 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

30V Complementary MOSFET (Preliminary) www.goodark.com Page 4 of 5 Rev.1.0 Mechanical Data DFN2X3-8L COMMON DIMENSIONS(MM) PKG. W:VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 — 0.05 A3 0.2 REF. D 2.95 3.00 3.05 E 1.95 2.00 2.05 b 0.25 0.30 0.35 L 0.25 0.35 0.45 D2 0.77 0.92 1.02 E2 0.38 0.53 0.63 e 0.65 BCS. NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. T op View Bottom View Side View Bottom View

30V Complementary MOSFET (Preliminary) www.goodark.com Page 5 of 5 Rev.1.0 Ordering and Marking Information Device Marking: 3056C Package (Available) DFN2X3-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box DFN2*3-8L 3000pcs 10pcs 30000pcs 4pcs 120000pcs