SSF3055 SILIKRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

  • V DS = 25V,ID = 12A RDS(ON) < 120mΩ @ VGS=5V RDS(ON) < 90mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

DESCRIPTION

The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery protection or in other Switching application. S D G D G S Marking and pin Assignment Schematic diagram TO-252(DPAK) top view Application

  • Battery protection
  • Load switch
  • Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity

3055 SSF3055 To-252(DPAK) - - -

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V ID 12 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM 45 A Maximum Power Dissipation PD 48 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 75 /W℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 25 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 25 µA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±250 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250µA 0.8 1.2 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=12A 70 120 mΩ VGS=10V, ID=12A 50 90 mΩ

Forward Transconductance gFS VDS=15V,ID=12A 16 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss 450 PF Output Capacitance Coss 200 PF Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz 60 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) 6 nS Turn-on Rise Time tr 6 nS Turn-Off Delay Time td(off) 20 nS Turn-Off Fall Time tf VDS=15V,ID=12A VGS=10V,RGEN=2.5Ω RL=1Ω 5 nS Total Gate Charge Qg 15 nC Gate-Source Charge Qgs 2.0 nC Gate-Drain Charge Qgd VDS=12.5V,ID=6A,VGS=10V 7.0 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=12A 1.5 V Diode Forward Current (Note 2) IS 12 A Reverse Recovery Time trr 30 nS Reverse Recovery Charge Qrr IF = IS, dlF/dt = 100A / µS 43 nC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VIN VOUT 10% 10% 50% 50% PULSE WIDTH INVERTED td(on) 90% tr ton 90% 10% toff td(off) tf 90% VIN VOUT 10% 10% 50% 50% PULSE WIDTH INVERTED td(on) 90%90% tr ton 90% 10% toff td(off) tf 90% Vgs Rgen Vin G Vdd Rl Vout S D Figure 2:Switching Waveforms Figure 1: Switching Test Circuit

TO-252 PACKAGE INFORMATION NOTES： 1. No current JEDEC outline for this package. 2. L3 and b3 dimensions establish a minimum mounting surface for terminal 3. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. L1 is the terminal length for soldering. 6. Position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension D. 7. Controlling dimension: Inch.