SSF3051G7 GOOD-ARK | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

www.goodark.com Page 1 of 8 Rev.1.0 Main Product Characteristics Features and Benefits:

Description

Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V I D -4 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -25 A Maximum Power Dissipation P D 1.7 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Resistance Thermal Resistance, Junction-to-Ambient (Note 2) R θJA 75 /W ℃ Thermal Resistance, Junction-to-Case(Note 2) R θJC 30 /W ℃ V DSS -30V R DS (on) 45mohm(typ.) I D -4A SOT23-6 Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for buttery protection, load switching and general power management  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. D G S 3051G7 3051G7

www.goodark.com Page 2 of 8 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 V Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±25V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -1 -1.6 -3 V V GS =-10V, I D =-4A 45 51 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-3.4A 65 85 mΩ Forward Transconductance g FS V DS =-5V,I D =-4A 8.5 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 520 PF Output Capacitance C oss 94 PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz 73 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 8.9 nS Turn-on Rise Time t r 4.0 nS Turn-Off Delay Time t d(off) 22.6 nS Turn-Off Fall Time t f V DD =-15V,I D =-1A V GS =-10V,R GEN =6Ω 5.5 nS Total Gate Charge Q g 7.1 nC Gate-Source Charge Q gs 0.86 nC Gate-Drain Charge Q gd V DS =-5V,I D =-4A, V GS =-5V 3.9 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1.3A -0.8 -1.2 V Diode Forward Current (Note 2) I S -4 A Reverse Recovery Time t rr 10.3 nS Reverse Recovery Charge Q rr Tj=25℃,IF=-4A, di/dt=-100A/uS 4.3 nC

www.goodark.com Page 3 of 8 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.

www.goodark.com Page 6 of 8 Rev.1.0 Figure 13: Normalized Maximum Transient Thermal Impedance

www.goodark.com Page 7 of 8 Rev.1.0 Mechanical Data SOT23-6 Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

www.goodark.com Page 8 of 8 Rev.1.0 Ordering and Marking Information Device Marking: 3051G7 Package (Available) SOT23-6 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT23-6 3000pcs 10pcs 30000pcs 4pcs 120000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices