SSF3036C GOOD-ARK | Alldatasheet

Document overview

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Technical content

www.goodark.com Page 1 of 5 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Max. Symbol Parameter N-Channel P-Channel Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) 4 -3.6 I DM Pulsed Drain Current 16 -14.4 A V GS Gate to source voltage ±12 ±12 V P D @TC = 25°C Power Dissipation 2.1 1.3 W T J T STG Operating Junction and Storage Temperature Range -55 to + 150 -55 to + 150 Thermal Resistance Max. Symbol Characteristics Typ. N-channel P-Channel Units R θJA Junction-to-ambient (t ≤ 5s) — 60 95 ℃/W NMOS PMOS V DSS 30V -30V R DS (on) 32.4mohm 61.6mohm I D 4A -3.6A Schematic Diagram It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable devic e for use in power switching application and a wide variety of other

applications

 Advanced Process T echnology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product

www.goodark.com Page 2 of 5 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions N-channel 30 — — V GS = 0V, I D = 250μA V (BR)DSS Drain-to-Source breakdown voltage P-Channel -30 — — V V GS = 0V, I D = -250μA N-channel — 32.4 36 V GS = 4.5V,I D = 4.8A R DS(on) Static Drain-to-Source on-resistance P-Channel — 61.6 65 mΩ V GS = -4.5V,I D = -2.3A N-channel 0.5 — 2 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage P-Channel -0.5 — -2 V V DS = V GS , I D = -250μA N-channel — — 1 V DS =30V,V GS = 0V I DSS Drain-to-Source leakage current P-Channel — — -1 μA V DS =-30V,V GS = 0V N-channel — 100 V GS =12V N-channel -100 — V GS = -12V P-Channel — — 100 V GS =12V I GSS Gate-to-Source forward leakage P-Channel -100 — — nA V GS =-12V Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions N-channel — — 4 I S Continuous Source Current P-Channel — — -3.6 A N-channel — — 16 I SM Pulsed Source Current P-Channel — — -14.4 A MOSFET symbol showing the integral reverse p-n junction diode. N-channel — 0.82 1.2 I S =2.4A, V GS =0V V SD Diode Forward Voltage P-Channel — -0.85 -1.2 V I S =-1.5A, V GS =0V

www.goodark.com Page 3 of 5 Rev.1.0 Test Circuits and Waveforms Notes ①The maximum current rating is limited by bond-wires. Repetitive rating; pulse width limited by max. junction temperature.② The power diss③ ipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C Thermal Characteristics Switching time waveform: Figure1. Normalized Thermal Transient Impedance, Junction-to-Ambient

www.goodark.com Page 4 of 5 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max A1 0.000 - 0.050 0.000 - 0.002 e Symbol Dimension In Millimeters Dimension In Inches 0.650BSC 0.026BSC 0.200REF 0.008REF DFN 3X2_8L PACKAGE OUTLINE DIMENSION

www.goodark.com Page 5 of 5 Rev.1.0 Ordering and Marking Information Device Marking: 3036C Package (Available) DFN 3x2-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/T ube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box DFN 3x2-8L 3000pcs 10pcs 30000pcs 4pcs 120000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices