SSF3022 SILIKRON | Alldatasheet

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©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 1of5 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25ْC Continuous drain current,VGS@10V 60 ID@Tc=100ْC Continuous drain current,VGS@10V 50 IDM Pulsed drain current ① 240 A PD@TC=25ْC Power dissipation 150 W Linear derating factor 2.0 W/ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 240 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — RθJA Junction-to-ambient — — 62 ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 16 22 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 3.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A — — 1 VDS=100V,VGS=0V IDSS Drain-to-Source leakage current — — 10 μA VDS=100V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF3022 TOP View (TO220) ID =60A BV=100V Rdson=22mohm Feathers: „ Advanced trench process technology „ Ultra low Rdson, typical 16mohm „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current Description: The SSF3022 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF3022 is assembled in high reliability and qualified assembly house. Application: „ Power switching application

Gate-to-Source reverse leakage — — -100 VGS=-20V Qg Total gate charge — 90 — Qgs Gate-to-Source charge — 14 — Qgd Gate-to-Drain("Miller") charge — 24 — nC ID= 3 0 A VDD=30V VGS=10V td(on) Turn-on delay time — 18.2 — tr Rise time — 15.6 — td(off) Turn-Off delay time — 70.5 — tf Fall time — 13.8 — nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V Ciss Input capacitance — 3150 — Coss Output capacitance — 300 — Crss Reverse transfer capacitance — 240 — pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 60 ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=30A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS Qrr Reverse Recovery Charge － 107 — nC TJ=25ْC,IF=60A di/dt=100A/μs ③ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 40A, VDD = 50V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C BVdss Gate charge test circuit EAS test circuit ©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 2of5

©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 3of5 Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance: On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature

Source-Drain Diode Forward Voltage Gate Charge Max Drain Current vs Junction Temperature Safe Operation Area Transient Thermal Impedance Curve ©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 4of5

TO220 MECHANICAL DATA: ©Silikron Semiconductor CO.,LTD 2008.11.13 Version : 1.0 page 5of5