DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

Description

Max. Units I D TC C Continuous Drain Current, V GS 10V 0.5 A I D TC 100 C Continuous Drain Current, V GS 10V 0.3 I DM Pulsed Drain Current P D @TC C Power Dissipation 0.7 W V DS Drain-Source Voltage V V GS Gate-to-Source Voltage V T J T STG Operating Junction Storage Temperature Range -55 to 150 C Thermal Resistance Symbol Characterizes Typ. Max. Units R θ J A Junction-to-ambient 10s) 180 Marking and pin Assignment Schematic diagram Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose

applications

U ltra low on-resistance with low gate charge F ast switching and reverse body recovery 150 operating temperature ESD Protected, HBM 1KV It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating. These a wide varietyof other

CO.,LTD. Preliminary Version: page of www.silikron.com Electrical Characterizes A =25 unless otherwise specified Symbol Parameter Min. Typ. Max Units Conditions V B DSS Drain-to-Source breakdown voltage V V GS 0V, I D 250 μ A R DS(on) Static Drain-to-Source on-resistance 1.5 Ω V GS =4.5V, I D 0.2 A R DS(on) Static Drain-to-Source on-resistance Ω V GS =2.5V, I D 0.2 A V GS(th) Gate threshold voltage 0.7 1.4 V V DS V GS I D 250 μ A 0.63 T J 125 I DSS Drain-to-Source leakage current μ A V DS V,V GS T J 125 C I GSS Gate-to-Source forward leakage μ A V GS V V GS V Q g Total gate charge 1.15 nC I D 0.1 A V DS V V GS 4.5 V Q gs Gate-to-Source charge 0.35 Q gd Gate-to-Drain("Miller") charge 0.25 t d(on) Turn-on delay time ns V GS 4.5 V DS R GEN Ω I D 0.1 A t r Rise time t d(off) Turn-Off delay time t f Fall time C iss Input capacitance pF V GS V DS V ƒ Hz C oss Output capacitance C rss Reverse transfercapacitance Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max Units Conditions I S Continuous Source Current (Body Diode) 0.5 A MOSFET symbol showing the integral reverse p-n junction diode. I SM Pulsed Source Current Body Diode A V SD Diode Forward Voltage 0.72 1.2 V I S 0.3 V GS =0V

CO.,LTD. Preliminary Version: page of www.silikron.com Test circuits and Waveforms Switch Waveforms: Notes: Calculated continuous current based on maximum allowablejunction temperature. Repetitive rating; pulse width limited by max junction temperature. The value of R θ J A is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 C These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming amaximum junction temperature of T J(MAX) 150

CO.,LTD. Preliminary Version: page of www.silikron.com Mechanical Data

CO.,LTD. Preliminary Version: page of www.silikron.com Ordering and Marking Information Device Marking: 3002E Package (Available) SOT-23 Operating Temperature Range C -55 to 150 º C Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOT23 3000 30000 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj= 80% of Max V DSS CES R 168 hours 500 hours 1000 hours lots x devices High Temperature Gate Bias(HTGB) Tj=150 100% of Max V GSS 168 hours 500 hours 1000 hours lots x devices

CO.,LTD. Preliminary Version: page of www.silikron.com ATTENTION: Any and all Silikron products described or contained herein do not have specifications that can handle reliability, such as life-support systems, aircraft's control systems, or other damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support Technical@silikron.com Suzhou Silikron Semiconductor Corp. 11A, Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com