SSF2816E SILIKRON | Alldatasheet
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PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 2816E SSF2816E TSSOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM 25 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 /W℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES
- V = 20V,I DS D = 7A Schematic diagram < 30mΩ @ VRDS(ON) GS=2.5V < 26mΩ @ VRDS(ON) GS=3.1V < 23mΩ @ VRDS(ON) GS=4V R < 22mΩ @ VDS(ON) GS=4.5V ESD Rating：2500V HBM
- High Power and current handing capability
- Lead free product is acquired Marking and pin Assignment
- Surface Mount Package Application
- Battery protection
- Load switch
- Power management TSSOP-8 top view
Zero Gate Voltage Drain Current I V =20V,V =0V 1 μA DSS DS GS V =±4.5V,V =0V ±200 nA GS DS Gate-Body Leakage Current IGSS V =±10V,V =0V ±10 uA GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V =V ,IGS(th) DS GS D=250μA 0.6 0.75 1.2 V V =4.5V, IGS D=6.5A 16.5 22 mΩ V =4V, IGS D=6A 17 23 mΩ VGS=3.1V, ID=5.5A 19 26 mΩ Drain-Source On-State Resistance RDS(ON) V =2.5V, IGS D=5.5A 22 30 mΩ Forward Transconductance g V =10V,I =6.5A 6.6 S FS DS D DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C 600 PF lss Output Capacitance Coss 330 PF V =8V,VDS GS=0V, F=1.0MHz
140 PF Reverse Transfer Capacitance Crss
SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t 10 20 nS d(on) Turn-on Rise Time t 11 25 nS r Turn-Off Delay Time td(off) 35 70 nS V =10V,IDD D=1A V =4.5V,R Turn-Off Fall Time tf GS GEN=6Ω 30 60 nS Total Gate Charge Q 10 15 nC g Gate-Source Charge Qgs 2.3 nC V =10V,I =7A, DS D =4.5V VGS Gate-Drain Charge Q 3 nC gd DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V V =0V,I =1.5A 0.84 1.2 V SD GS S NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
TSSOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum rati ngs, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of an y and all Silikron products described or contained here in stipulate the performance, characteristics, and functions of the described products in the independent state, and are no t guarantees of the performanc e, characteristics, and functions of the described products as moun ted in the customer’s products or equipm ent. To verify symptoms and states that cannot be evaluated in an indepen dent device, the customer should always evaluate and test devices mounted in the customer ’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability prod ucts. However, any a nd all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, an d structural design. ■ In the event that any or all Silikron products(including te chnical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, su ch products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be repro duced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any informat ion storage or retrieval system, or other wise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, et c. When designing equipment, re fer to the "Delivery Specific ation" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specificat ions and information herein are subject to change without notice.