SSF2816E GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 6 Rev.1.2 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 7 I DM Pulsed Drain Current② 25 A P D @TC = 25°C Power Dissipation③ 1.5 W V DS Drain-Source Voltage 20 V V GS Gate-to-Source Voltage ± 12 V T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJA Junction-to-ambient (t ≤ 10s) ④ — 83 ℃/W V DSS 20V R DS (on) 16.5mohm(typ.) I D TSSOP-8 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  2KV ESD Protected  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 6 Rev.1.2

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 20 — — V V GS = 0V, ID = 250μA — 16.5 22 V GS =4.5V,I D = 6.5A — 17 23 V GS =4V,I D = 6A — 19 26 V GS =3.1V,I D = 5.5A R DS(on) Static Drain-to-Source on-resistance — 22 30 mΩ V GS =2.5V,I D = 5.5A V GS(th) Gate threshold voltage 0.6 0.75 1.2 V V DS = V GS , I D = 250μA I DSS Drain-to-Source leakage current — — 1 μA V DS = 20V,V GS = 0V ±200 nA V GS =±4.5V,V DS =0V I GSS Gate-to-Source forward leakage ±10 uA V GS =±10V,V DS =0V g FS Forward Transconductance — 6.6 — S V DS =10V,I D =6.5A Q g Total gate charge — 10 15 Q gs Gate-to-Source charge — 2.3 — Q gd Gate-to-Drain("Miller") charge — 3 — nC V DS =10V, I D =7A, V GS =4.5V t d(on) Turn-on delay time — 10 20 t r Rise time — 11 25 t d(off) Turn-Off delay time — 35 70 t f Fall time — 30 60 ns V DD =10V,I D =1A V GS =4.5V,R GEN =6Ω C iss Input capacitance — 600 — C oss Output capacitance — 330 — C rss Reverse transfer capacitance — 140 — pF V GS = 0V V DS = 8V ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 7 A I SM Pulsed Source Current (Body Diode) — — 25 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.84 1.2 V I S =1.5A, V GS =0V

www.goodark.com Page 3 of 6 Rev.1.2 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 4 of 6 Rev.1.2 Typical Electrical and Thermal Characteristics r(t),Normalized Effective Transient Thermal Impedance Figure 1 Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec)

www.goodark.com Page 5 of 6 Rev.1.2 Mechanical Data Dimension In Millimeters Dimension In Inches Symbol Min Max Min Max D 2.800 3.200 0.110 0.126 E 6.200 6.600 0.244 0.260 b 0.210 0.280 0.008 0.011 c 0.130 0.190 0.005 0.007 E1 4.200 4.600 0.165 0.181 A - 1.200 - 0.047 A2 0.850 1.150 0.033 0.045 A1 0.050 0.150 0.002 0.006 e 0.65 (BSC) 0.026 (BSC) L 0.450 0.750 0.018 0.030 H 0.25 TYP 0.01 TYP θ 1

www.goodark.com Page 6 of 6 Rev.1.2 Ordering and Marking Information Device Marking: SSF2816E Package (Available) TSSOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TSSOP-8 3000 2 6000 8 48000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices