SSF2814EH2

SSF2814EH2 SILIKRON | Alldatasheet

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www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current 8 ① A ID @ TC = 100° C Continuous Drain Current 6.2 ① IDM Pulsed Drain Current ② 25 PD @TC = 25° C Power Dissipation ③ 2 W Linear Derating Factor 0.5 W/° C VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 10 V TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characterizes Typ. Max. Units RθJA Junction-to-ambient (t ≤ 10s) ④ — 90 ℃/W VDSS 20V RDS(on) 14mΩ (typ.) ID 8A① Marking and pin Assignment Schematic diagram  Advanced MOSFET process technology  Ultra low on-resistance with low gate charge  High Power and current handing capability  150℃ operating temperature  G/S ESD protect 2KV (HBM) The SSF2814EH2 series MOSFETs is a new technology, which combines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. TSSOP-8

www.silikron.com Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 20 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 14 20 mΩ VGS=4.5V,ID = 7A — 18 — TJ = 125°C — 20 28 mΩ VGS=2.5V,ID = 5.5A — 24 — TJ = 125°C — 38 50 mΩ VGS=1.8V,ID = 5A — 42 — TJ = 125°C VGS(th) Gate threshold voltage 0.6 — 1 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 20V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS = 4.5V — — 10 uA VGS = 10V — — -10 VGS = -10V Qg Total gate charge — 10 — nC ID = 7A, VDS=10V, VGS = 4.5V Qgs Gate-to-Source charge — 2.3 — Qgd Gate-to-Drain("Miller") charge — 3 — td(on) Turn-on delay time — 7.3 — ns VGS=4.5V, VDS =10V, RGEN=3Ω,ID =6.5 tr Rise time — 60 — td(off) Turn-Off delay time — 18 — tf Fall time — 5.9 — Ciss Input capacitance — 632 — pF VGS = 0V VDS = 10V ƒ = 1MHz Coss Output capacitance — 142 — Crss Reverse transfer capacitance — 134 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 8 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 25 A VSD Diode Forward Voltage — — 1.2 V IS=2.8A, VGS=0V trr Reverse Recovery Time — 35 — nS TJ = 25° C, IF =7A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 7.2 — nC

www.silikron.com Test circuits and Waveforms EAS Test Circuit: Gate charge test circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C

Figure 3. Maximum Drain Current Vs. Case Temperature

www.silikron.com Mechanical Data： TSSOP-8 Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

www.silikron.com Ordering and Marking Information Device Marking: 2814EH2 Package (Available) TSSOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TSSOP-8 3000 2 6000 8 48000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=150℃@ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices

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