SSF26NS60 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.4 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 20 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 13 I DM Pulsed Drain Current② 80 A Power Dissipation③ 208 W P D @TC = 25°C Linear Derating Factor 1.66 W/°C V DS Drain-Source Voltage 600 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=13.8mH 248 mJ I AS Avalanche Current @ L=13.8mH 6 A T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C V DSS 600V R DS (on) 0.135Ω(typ.) I D 20A TO-220 Marking and Pin Assignment Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF26NS60 series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS (ON) , energy saving, high reliability and uniformity, superior power density and space saving.

www.goodark.com Page 2 of 7 Rev.1.4 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 0.6 °C/W R θJA Junction-to-ambient (t ≤ 10s) ④ — 62 °C/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 600 — — V V GS = 0V, I D = 1mA — 0.135 0.165 V GS =10V,I D = 10A R DS(on) Static Drain-to-Source on-resistance — 0.31 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.54 — V T J = 125°C — — 1 V DS = 600V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 52.1 Q gs Gate-to-Source charge — 11.2 Q gd Gate-to-Drain("Miller") charge — 24.9 nC I D = 20A, V DS =480V, V GS = 10V t d(on) Turn-on delay time — 15.2 t r Rise time — 18.2 t d(off) Turn-Off delay time — 46.0 t f Fall time — 15.7 nS V GS =10V, V DS =300V, R L =30Ω, R GEN =4.7Ω I D =10A C iss Input capacitance — 1474 C oss Output capacitance — 149 C rss Reverse transfer capacitance — pF V GS = 0V V DS = 50V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 20 A I SM Pulsed Source Current (Body Diode) — — 80 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.88 1.3 V I S =20A, V GS =0V t rr Reverse Recovery Time — 370 — nS Q rr Reverse Recovery Charge — 5 — uC T J = 25°C, I F =20A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.4 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C. ⑥ The maximum current rating is limited by bond-wires.

www.goodark.com Page 6 of 7 Rev.1.4 Mechanical Data Min Nom Max Min Nom Max ФP1 1.500 0.059 e ϴ1 - 7 - - 7 ϴ2 - 7 - - 7 ϴ3 - 3 - 5 ϴ4 - 3 - 1 Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC TO-220 PACKAGE OUTLINE DIMENSION_GN E D ФP A ce b ϴ2 ϴ L ФP1 E

www.goodark.com Page 7 of 7 Rev.1.4 Ordering and Marking Information Device Marking: SSF26NS60 Package (Available) TO-220 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box InnerBoxes/ CartonBox Units/Carton Box TO-220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices