SSF2649 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.0 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF2649 SSF2649 SOP-8 - - - ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V I D -7.9 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -30 A Maximum Power Dissipation P D 5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 85 /W℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -20 V Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V ±100 nA GENERAL FEATURES DS = -20V,I D = -2.9A R DS(ON) < 98mΩ @ V GS =-2.5V R DS(ON) < 58mΩ @ V GS =-4.5V
- High Power and current handling capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF2649 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings.
APPLICATIONS
- Battery protection
- Load switch
- Power management Marking and P in Assignment Schematic D iagram SOP T op V iew
www.goodark.com Page 2 of 4 Rev.1.0 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS , I D V GS =-4.5V, I D =-2.9A 49 58 Drain-Source On-State Resistance R DS(ON) V GS =-2.7V, I D =-1.5A 82 98 mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 1040 PF Output Capacitance C oss 156 PF Reverse Transfer Capacitance C rss V DS =-20V,V GS =0V, F=1.0MHz 112 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 9 nS Turn-on Rise Time t r 8 nS Turn-Off Delay Time t d(off) 87 nS Turn-Off Fall Time t f V DD =-10V, I D =-1A V GS =-4.5V,R GEN =6Ω 38 nS Total Gate Charge Q g 12 nC Gate-Source Charge Q gs 2.7 nC Gate-Drain Charge Q gd V DS =-10V, I D =-4.7A,V GS =-4.5V 1.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-2.9A -1.0 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SOP-8 PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.