SSF2429 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.0 SSF 20V P-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity
2429 SSF2429 SOT23-6 Ø180mm 8mm 3000 units
ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V I D -5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -20 A Maximum Power Dissipation P D 1.4 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 90 /W℃ GENERAL FEATURES
- V DS = -20V,I D =-5A R DS(ON) < 35mΩ @ V GS =-4.5V R DS(ON) < 48mΩ @ V GS =-2.5V
- High Power and current handing capability
- Lead free product
- Surface Mount Package A PPLICATIONS
- Battery protection
- Load switch
- Power management Marking and P in Assignment SOT T op V iew
DESCRIPTION
The SSF2429 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. Schematic Diagram D G S
www.goodark.com Page 2 of 4 Rev.1.0 SSF 20V P-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -20 V Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -0.5 -0.7 -1 V V GS =-4.5V, I D =-5A 29 35 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-3A 37 48 mΩ Forward Transconductance g FS V DS =-10V,I D =-3A 4 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 1450 PF Output Capacitance C oss 200 PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz 160 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 5 nS Turn-on Rise Time t r 13 nS Turn-Off Delay Time t d(off) 80 nS Turn-Off Fall Time t f V DD =-10V,I D =-1A V GS =-4.5V,R GEN =6Ω 35 nS Total Gate Charge Q g 17 nC Gate-Source Charge Q gs 4 nC Gate-Drain Charge Q gd V DS =-10V,I D =-4.5A, V GS =-5V 4.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1.3A -1.3 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SSF 20V P-Channel MOSFET SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.